Infineon HEXFET Type N-Channel MOSFET, 260 A, 75 V, 7-Pin TO-263
- RS庫存編號:
- 257-9417
- 製造零件編號:
- IRFS3107TRL7PP
- 製造商:
- Infineon
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
查看批量定價選項小計（1 卷，共 800 件）*
TWD63,520.00
(不含稅)
TWD66,696.00
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2026年10月19日 發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每卷* |
|---|---|---|
| 800 - 1600 | TWD79.40 | TWD63,520.00 |
| 2400 + | TWD77.80 | TWD62,240.00 |
* 參考價格
- RS庫存編號:
- 257-9417
- 製造零件編號:
- IRFS3107TRL7PP
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 260A | |
| Maximum Drain Source Voltage Vds | 75V | |
| Package Type | TO-263 | |
| Series | HEXFET | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 2.6mΩ | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 370W | |
| Typical Gate Charge Qg @ Vgs | 160nC | |
| Forward Voltage Vf | 1.3V | |
| Maximum Operating Temperature | 175°C | |
| Length | 10.54mm | |
| Width | 9.65 mm | |
| Height | 4.83mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 260A | ||
Maximum Drain Source Voltage Vds 75V | ||
Package Type TO-263 | ||
Series HEXFET | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 2.6mΩ | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 370W | ||
Typical Gate Charge Qg @ Vgs 160nC | ||
Forward Voltage Vf 1.3V | ||
Maximum Operating Temperature 175°C | ||
Length 10.54mm | ||
Width 9.65 mm | ||
Height 4.83mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon IRFS series is the 75V single n channel HEXFET power mosfet in a D2 Pak 7-Pin package.
Optimized for broadest availability from distribution partners
Product qualification according to JEDEC standard
Normal level is optimized for 10 V gate drive voltage
Industry standard surface mount power package
Higher current rating (by 23 percent) vs D2 PAK (of same die size)
相關連結
- Infineon HEXFET Type N-Channel MOSFET 75 V, 7-Pin TO-263 IRFS3107TRL7PP
- Infineon HEXFET Type N-Channel MOSFET 75 V TO-263
- Infineon HEXFET Type N-Channel MOSFET 75 V TO-263
- Infineon HEXFET Type N-Channel MOSFET 75 V TO-263
- Infineon HEXFET Type N-Channel MOSFET 75 V TO-263 IRFB3307PBF
- Infineon HEXFET Type N-Channel MOSFET 75 V TO-263 IRFS3607TRLPBF
- Infineon HEXFET Type N-Channel MOSFET 75 V TO-263 IRFS3107TRLPBF
- Infineon HEXFET Type N-Channel Power MOSFET 75 V Enhancement, 3-Pin TO-263