Infineon HEXFET Type N-Channel MOSFET, 120 A, 75 V TO-263 IRFB3307PBF

N
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小計(1 包,共 2 件)*

TWD163.00

(不含稅)

TWD171.16

(含稅)

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每單位
每包*
2 - 8TWD81.50TWD163.00
10 - 18TWD73.50TWD147.00
20 - 48TWD72.00TWD144.00
50 - 98TWD70.50TWD141.00
100 +TWD59.00TWD118.00

* 參考價格

包裝方式:
RS庫存編號:
257-5799
製造零件編號:
IRFB3307PBF
製造商:
Infineon
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品牌

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

120A

Maximum Drain Source Voltage Vds

75V

Package Type

TO-263

Series

HEXFET

Mount Type

PCB

Maximum Drain Source Resistance Rds

6.3mΩ

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

200W

Forward Voltage Vf

1.3V

Maximum Operating Temperature

175°C

Standards/Approvals

No

Automotive Standard

No

The Infineon strongIRFET power MOSFET family is optimized for low RDS and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.

Optimized for broadest availability from distribution partners

Product qualification according to JEDEC standard

Industry standard through-hole power package

High-current rating

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