製造零件編號

Infineon HEXFET Type N-Channel MOSFET, 82 A, 75 V, 3-Pin TO-263

RS庫存編號:: 214-4443
製造零件編號:: IRF2807STRLPBF
製造商:: Infineon

Infineon HEXFET Type N-Channel MOSFET, 82 A, 75 V, 3-Pin TO-263

此圖片僅供參考，請參閲產品詳細資訊及規格

可享批量折扣

小計（1 卷，共 800 件）*

TWD20,640.00

(不含稅)

TWD21,672.00

訂單超過 $1,300.00 免費送貨

暫時缺貨

800 件從 2026年6月04日起裝運發貨

**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。

單位	每單位	每卷*
800 - 800	TWD25.80	TWD20,640.00
1600 +	TWD25.00	TWD20,000.00

* 參考價格

RS庫存編號:: 214-4443
製造零件編號:: IRF2807STRLPBF
製造商:: Infineon

規格

產品概覽和技術數據資料表

法例與合規

產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	82A
	Maximum Drain Source Voltage Vds	75V
	Series	HEXFET
	Package Type	TO-263
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	13mΩ
	Typical Gate Charge Qg @ Vgs	160nC
	Maximum Power Dissipation Pd	230W
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	1.2V
	Maximum Operating Temperature	175°C
	Standards/Approvals	No
	Automotive Standard	No

	選取全部
	品牌 Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 82A
	Maximum Drain Source Voltage Vds 75V
	Series HEXFET
	Package Type TO-263
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 13mΩ
	Typical Gate Charge Qg @ Vgs 160nC
	Maximum Power Dissipation Pd 230W
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 1.2V
	Maximum Operating Temperature 175°C
	Standards/Approvals No
	Automotive Standard No

Datasheet - IRF2807STRLPBF

This Infineon HEXFET Power MOSFET utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design provides reliable and efficient device

It is fully avalanche rated

Infineon HEXFET Type N-Channel MOSFET, 82 A, 75 V, 3-Pin TO-263

訂單超過 $1,300.00 免費送貨

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