Infineon HEXFET Type N-Channel Power MOSFET, 75 A, 75 V Enhancement, 3-Pin TO-263

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RS庫存編號:
165-5889
製造零件編號:
IRF2807ZSTRLPBF
製造商:
Infineon
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品牌

Infineon

Channel Type

Type N

Product Type

Power MOSFET

Maximum Continuous Drain Current Id

75A

Maximum Drain Source Voltage Vds

75V

Series

HEXFET

Package Type

TO-263

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

9.4mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

71nC

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.3V

Maximum Power Dissipation Pd

300W

Maximum Gate Source Voltage Vgs

±20 V

Maximum Operating Temperature

175°C

Length

10.67mm

Height

4.83mm

Width

9.65 mm

Standards/Approvals

No

Automotive Standard

No

COO (Country of Origin):
CN

Infineon HEXFET Series MOSFET, 89A Maximum Continuous Drain Current, 170W Maximum Power Dissipation - IRF2807ZSTRLPBF


This MOSFET is designed for high-performance switching applications, offering efficiency and reliability across various electronic circuits. Its low on-resistance and strong thermal characteristics make it essential for users in automation, electrical, and mechanical sectors, enabling effective power management and reduced energy loss.

Features & Benefits


• Continuous drain current up to 89A

• Maximum drain-source voltage of 75V

• Operating temperature up to +175°C for thermal stability

• Low Rds(on) of 9.4 mΩ to reduce power loss

• Quick switching abilities enhance system responsiveness

• Enhancement mode device for optimal operation

Applications


• Used in power supply circuits for efficient energy conversion

• Employed in automotive and industrial systems for motor control

• Suitable for DC-DC converters and switching regulators

• Applicable in high-frequency switching in electronics

• Utilised for overload protection in various electrical systems

What is the maximum gate-source voltage this component can handle?


It can manage a maximum gate-source voltage of ±20V, ensuring compatibility with diverse control signals.

How does this component perform under high temperatures?


With a maximum operating temperature of +175°C, it remains stable and functional in high-temperature environments, making it suitable for such applications.

What is the purpose of the low on-resistance feature?


The low on-resistance minimises heat generation and enhances efficiency during operation, which is important for high current applications.

Can it be used in both surface mount and through-hole designs?


This device is specifically designed for surface mount technology in a D2PAK package, optimising space and thermal performance.

How does the switching speed benefit system design?


Fast switching improves overall system efficiency and allows for Compact design by facilitating higher frequency operation in power management solutions.

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