Infineon HEXFET Type N-Channel MOSFET, 183 A, 75 V Enhancement, 3-Pin
- RS庫存編號:
- 273-3032
- 製造零件編號:
- IRFS7734TRLPBF
- 製造商:
- Infineon
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TWD86.10
(含稅)
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|---|---|---|
| 2 - 8 | TWD41.00 | TWD82.00 |
| 10 - 48 | TWD40.00 | TWD80.00 |
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| 100 - 248 | TWD38.00 | TWD76.00 |
| 250 + | TWD37.00 | TWD74.00 |
* 參考價格
- RS庫存編號:
- 273-3032
- 製造零件編號:
- IRFS7734TRLPBF
- 製造商:
- Infineon
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 183A | |
| Maximum Drain Source Voltage Vds | 75V | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 3.5mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Maximum Power Dissipation Pd | 290W | |
| Typical Gate Charge Qg @ Vgs | 270nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS, Lead-Free | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 183A | ||
Maximum Drain Source Voltage Vds 75V | ||
Series HEXFET | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 3.5mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Maximum Power Dissipation Pd 290W | ||
Typical Gate Charge Qg @ Vgs 270nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS, Lead-Free | ||
The Infineon single N-channel HEXFET power MOSFET in a D2-Pak package is optimized for broadest availability from distribution partners.
Product qualification according to JEDEC standard
Softer body diode compared to previous silicon generation
Industry standard surface-mount power package
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