製造零件編號

Infineon HEXFET Type N-Channel MOSFET, 183 A, 75 V Enhancement, 3-Pin IRFS7734TRLPBF

RS庫存編號:: 273-3031
製造零件編號:: IRFS7734TRLPBF
製造商:: Infineon

Infineon HEXFET Type N-Channel MOSFET, 183 A, 75 V Enhancement, 3-Pin IRFS7734TRLPBF

此圖片僅供參考，請參閲產品詳細資訊及規格

小計（1 卷，共 800 件）*

TWD32,880.00

(不含稅)

TWD34,528.00

訂單超過 $1,300.00 免費送貨

暫時缺貨

從 2026年3月31日發貨

**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。

單位	每單位	每卷*
800 +	TWD41.10	TWD32,880.00

* 參考價格

RS庫存編號:: 273-3031
製造零件編號:: IRFS7734TRLPBF
製造商:: Infineon

規格

產品概覽和技術數據資料表

法例與合規

產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	183A
	Maximum Drain Source Voltage Vds	75V
	Series	HEXFET
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	3.5mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	±20 V
	Maximum Power Dissipation Pd	290W
	Typical Gate Charge Qg @ Vgs	270nC
	Forward Voltage Vf	1.2V
	Maximum Operating Temperature	175°C
	Standards/Approvals	RoHS, Lead-Free

	選取全部
	品牌 Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 183A
	Maximum Drain Source Voltage Vds 75V
	Series HEXFET
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 3.5mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs ±20 V
	Maximum Power Dissipation Pd 290W
	Typical Gate Charge Qg @ Vgs 270nC
	Forward Voltage Vf 1.2V
	Maximum Operating Temperature 175°C
	Standards/Approvals RoHS, Lead-Free

Datasheet - IRFS7734TRLPBF

The Infineon single N-channel HEXFET power MOSFET in a D2-Pak package is optimized for broadest availability from distribution partners.

Product qualification according to JEDEC standard

Softer body diode compared to previous silicon generation

Industry standard surface-mount power package

Infineon HEXFET Type N-Channel MOSFET, 183 A, 75 V Enhancement, 3-Pin IRFS7734TRLPBF

訂單超過 $1,300.00 免費送貨

相關連結