製造零件編號

Infineon HEXFET Type N-Channel MOSFET, 269 A, 75 V Enhancement, 7-Pin TO-263 IRFS7730TRL7PP

RS庫存編號:: 218-3124
製造零件編號:: IRFS7730TRL7PP
製造商:: Infineon

Infineon HEXFET Type N-Channel MOSFET, 269 A, 75 V Enhancement, 7-Pin TO-263 IRFS7730TRL7PP

此圖片僅供參考，請參閲產品詳細資訊及規格

可享批量折扣

小計（1 包，共 5 件）*

TWD320.00

(不含稅)

TWD336.00

訂單超過 $1,300.00 免費送貨

有庫存

1,225 件準備從其他地點送貨

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單位	每單位	每包*
5 - 195	TWD64.00	TWD320.00
200 - 395	TWD62.40	TWD312.00
400 +	TWD58.40	TWD292.00

* 參考價格

RS庫存編號:: 218-3124
製造零件編號:: IRFS7730TRL7PP
製造商:: Infineon

規格

產品概覽和技術數據資料表

法例與合規

產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	269A
	Maximum Drain Source Voltage Vds	75V
	Series	HEXFET
	Package Type	TO-263
	Mount Type	Surface
	Pin Count	7
	Maximum Drain Source Resistance Rds	2mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	428nC
	Maximum Power Dissipation Pd	375W
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Operating Temperature	175°C
	Width	4.83 mm
	Height	9.65mm
	Standards/Approvals	No
	Length	10.67mm
	Automotive Standard	No

	選取全部
	品牌 Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 269A
	Maximum Drain Source Voltage Vds 75V
	Series HEXFET
	Package Type TO-263
	Mount Type Surface
	Pin Count 7
	Maximum Drain Source Resistance Rds 2mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 428nC
	Maximum Power Dissipation Pd 375W
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Operating Temperature 175°C
	Width 4.83 mm
	Height 9.65mm
	Standards/Approvals No
	Length 10.67mm
	Automotive Standard No

Datasheet - IRFS7730TRL7PP

The Infineon HEXFET series single N-Channel Power MOSFET. Integrated with D2PAK 7pin (TO-263 7pin) type package.

Lead-free, RoHS compliant

Infineon HEXFET Type N-Channel MOSFET, 269 A, 75 V Enhancement, 7-Pin TO-263 IRFS7730TRL7PP

訂單超過 $1,300.00 免費送貨

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