Infineon HEXFET Type N-Channel MOSFET, 80 A, 75 V TO-263 IRFS3607TRLPBF
- RS庫存編號:
- 257-9426
- Distrelec 貨號:
- 304-40-543
- 製造零件編號:
- IRFS3607TRLPBF
- 製造商:
- Infineon
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可享批量折扣
小計（1 包，共 5 件）*
TWD172.00
(不含稅)
TWD180.60
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 2,685 件準備從其他地點送貨
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單位 | 每單位 | 每包* |
|---|---|---|
| 5 - 45 | TWD34.40 | TWD172.00 |
| 50 - 95 | TWD32.60 | TWD163.00 |
| 100 - 245 | TWD30.80 | TWD154.00 |
| 250 - 995 | TWD28.60 | TWD143.00 |
| 1000 + | TWD26.40 | TWD132.00 |
* 參考價格
- RS庫存編號:
- 257-9426
- Distrelec 貨號:
- 304-40-543
- 製造零件編號:
- IRFS3607TRLPBF
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 80A | |
| Maximum Drain Source Voltage Vds | 75V | |
| Package Type | TO-263 | |
| Series | HEXFET | |
| Maximum Drain Source Resistance Rds | 9mΩ | |
| Maximum Power Dissipation Pd | 140W | |
| Typical Gate Charge Qg @ Vgs | 56nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.3V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 80A | ||
Maximum Drain Source Voltage Vds 75V | ||
Package Type TO-263 | ||
Series HEXFET | ||
Maximum Drain Source Resistance Rds 9mΩ | ||
Maximum Power Dissipation Pd 140W | ||
Typical Gate Charge Qg @ Vgs 56nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.3V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon IRFS series is the 75V single n channel HEXFET power mosfet in a D2 Pak package.
Improved gate, avalanche and dynamic dv/dt ruggedness
Fully characterized capacitance and avalanche SOA
Enhanced body diode dV/dt and dI/dt capability
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