Name: Infineon HEXFET Type N-Channel MOSFET, -12 A, -30 V SO-8
Brand: Infineon
SKU: 257-9335
Price: 9.34 TWD
Availability: Discontinued

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選取全部	屬性	值
	品牌	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	-12A
	Maximum Drain Source Voltage Vds	-30V
	Package Type	SO-8
	Series	HEXFET
	Mount Type	Surface
	Maximum Drain Source Resistance Rds	11.9mΩ
	Forward Voltage Vf	-1.2V
	Maximum Power Dissipation Pd	2.5W
	Maximum Gate Source Voltage Vgs	25 V
	Typical Gate Charge Qg @ Vgs	18nC
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	150°C
	Standards/Approvals	RoHS
	Automotive Standard	No

	選取全部
	品牌 Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id -12A
	Maximum Drain Source Voltage Vds -30V
	Package Type SO-8
	Series HEXFET
	Mount Type Surface
	Maximum Drain Source Resistance Rds 11.9mΩ
	Forward Voltage Vf -1.2V
	Maximum Power Dissipation Pd 2.5W
	Maximum Gate Source Voltage Vgs 25 V
	Typical Gate Charge Qg @ Vgs 18nC
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 150°C
	Standards/Approvals RoHS
	Automotive Standard No

Datasheet - IRF9388TRPBF

The Infineon IRF series is the -30V p channel strong IRFET power mosfet in a SO 8 package. The strong IRFET power mosfet family is optimized for low RDS (on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including dc motors, battery management systems, inverters, and dc-dc converters.

Optimized for broadest availability from distribution partners

Product qualification according to JEDEC standard

Industry standard surface mount package

Silicon optimized for applications switching below 100 kHz

Infineon HEXFET Type N-Channel MOSFET, -12 A, -30 V SO-8

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