Infineon HEXFET Type N-Channel MOSFET, -9.2 A, -30 V, 8-Pin SO-8 IRF9358TRPBF
- RS庫存編號:
- 257-9331
- 製造零件編號:
- IRF9358TRPBF
- 製造商:
- Infineon
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 包，共 5 件）*
TWD133.00
(不含稅)
TWD139.65
(含稅)
訂單超過 $1,300.00 免費送貨
最後的 RS 庫存
- 最終 700 個，準備發貨
單位 | 每單位 | 每包* |
|---|---|---|
| 5 - 45 | TWD26.60 | TWD133.00 |
| 50 - 95 | TWD25.20 | TWD126.00 |
| 100 - 495 | TWD23.80 | TWD119.00 |
| 500 - 1995 | TWD22.20 | TWD111.00 |
| 2000 + | TWD20.20 | TWD101.00 |
* 參考價格
- RS庫存編號:
- 257-9331
- 製造零件編號:
- IRF9358TRPBF
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | -9.2A | |
| Maximum Drain Source Voltage Vds | -30V | |
| Package Type | SO-8 | |
| Series | HEXFET | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 23.8mΩ | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | -1.2V | |
| Typical Gate Charge Qg @ Vgs | 19nC | |
| Maximum Power Dissipation Pd | 2W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id -9.2A | ||
Maximum Drain Source Voltage Vds -30V | ||
Package Type SO-8 | ||
Series HEXFET | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 23.8mΩ | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf -1.2V | ||
Typical Gate Charge Qg @ Vgs 19nC | ||
Maximum Power Dissipation Pd 2W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon IRF series is the -30V dual p channel HEXFET power mosfet in a SO 8 package.
Optimized for broadest availability from distribution partners
Optimized for 4.5V gate drive voltage (called Logic level)
Capable of being driven at 2.5V gate drive voltage (called super logic level)
Reduced design complexity in high side configuration
Easier interface to microcontroller
相關連結
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