Name: Infineon HEXFET Type N-Channel MOSFET, -9.2 A, -30 V, 8-Pin SO-8
Brand: Infineon
SKU: 257-9330
Price: 17.43 TWD
Availability: Discontinued

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選取全部	屬性	值
	品牌	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	-9.2A
	Maximum Drain Source Voltage Vds	-30V
	Series	HEXFET
	Package Type	SO-8
	Pin Count	8
	Maximum Drain Source Resistance Rds	23.8mΩ
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Power Dissipation Pd	2W
	Typical Gate Charge Qg @ Vgs	19nC
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	-1.2V
	Maximum Operating Temperature	150°C
	Standards/Approvals	RoHS
	Automotive Standard	No

	選取全部
	品牌 Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id -9.2A
	Maximum Drain Source Voltage Vds -30V
	Series HEXFET
	Package Type SO-8
	Pin Count 8
	Maximum Drain Source Resistance Rds 23.8mΩ
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Power Dissipation Pd 2W
	Typical Gate Charge Qg @ Vgs 19nC
	Minimum Operating Temperature -55°C
	Forward Voltage Vf -1.2V
	Maximum Operating Temperature 150°C
	Standards/Approvals RoHS
	Automotive Standard No

Datasheet - IRF9358TRPBF

The Infineon IRF series is the -30V dual p channel HEXFET power mosfet in a SO 8 package.

Optimized for broadest availability from distribution partners

Optimized for 4.5V gate drive voltage (called Logic level)

Capable of being driven at 2.5V gate drive voltage (called super logic level)

Reduced design complexity in high side configuration

Easier interface to microcontroller

Infineon HEXFET Type N-Channel MOSFET, -9.2 A, -30 V, 8-Pin SO-8

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