製造零件編號

Infineon HEXFET Type N-Channel MOSFET, -7.4 A, -12 V, 8-Pin SO-8 IRF7329TRPBF

RS庫存編號:: 257-9308
製造零件編號:: IRF7329TRPBF
製造商:: Infineon

Infineon HEXFET Type N-Channel MOSFET, -7.4 A, -12 V, 8-Pin SO-8 IRF7329TRPBF

此圖片僅供參考，請參閲產品詳細資訊及規格

可享批量折扣

小計（1 包，共 5 件）*

TWD212.00

(不含稅)

TWD222.60

訂單超過 $1,300.00 免費送貨

最後的 RS 庫存

最終 3,400 個，準備發貨

單位	每單位	每包*
5 - 45	TWD42.40	TWD212.00
50 - 95	TWD40.20	TWD201.00
100 - 495	TWD38.00	TWD190.00
500 - 1995	TWD35.20	TWD176.00
2000 +	TWD32.60	TWD163.00

* 參考價格

RS庫存編號:: 257-9308
製造零件編號:: IRF7329TRPBF
製造商:: Infineon

規格

產品概覽和技術數據資料表

法例與合規

產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	-7.4A
	Maximum Drain Source Voltage Vds	-12V
	Series	HEXFET
	Package Type	SO-8
	Pin Count	8
	Maximum Drain Source Resistance Rds	199mΩ
	Maximum Gate Source Voltage Vgs	±8 V
	Typical Gate Charge Qg @ Vgs	8.1nC
	Maximum Power Dissipation Pd	2W
	Forward Voltage Vf	-1.2V
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	150°C
	Width	4 mm
	Height	1.75mm
	Standards/Approvals	RoHS Compliant
	Length	5mm
	Automotive Standard	No

	選取全部
	品牌 Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id -7.4A
	Maximum Drain Source Voltage Vds -12V
	Series HEXFET
	Package Type SO-8
	Pin Count 8
	Maximum Drain Source Resistance Rds 199mΩ
	Maximum Gate Source Voltage Vgs ±8 V
	Typical Gate Charge Qg @ Vgs 8.1nC
	Maximum Power Dissipation Pd 2W
	Forward Voltage Vf -1.2V
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 150°C
	Width 4 mm
	Height 1.75mm
	Standards/Approvals RoHS Compliant
	Length 5mm
	Automotive Standard No

Datasheet - IRF7329TRPBF

The Infineon IRF series is the -12V dual p channel HEXFET power mosfet in a SO 8 package.

RoHS Compliant

Low RDS (on)

Dual p channel mosfet

Infineon HEXFET Type N-Channel MOSFET, -7.4 A, -12 V, 8-Pin SO-8 IRF7329TRPBF

訂單超過 $1,300.00 免費送貨

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