Infineon HEXFET Type N-Channel MOSFET, -6.7 A, -20 V, 8-Pin SO-8 IRF7404TRPBF
- RS庫存編號:
- 257-9310
- 製造零件編號:
- IRF7404TRPBF
- 製造商:
- Infineon
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 包，共 10 件）*
TWD160.00
(不含稅)
TWD168.00
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 4,000 件從 2026年2月19日 起裝運發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每包* |
|---|---|---|
| 10 - 40 | TWD16.00 | TWD160.00 |
| 50 - 90 | TWD15.20 | TWD152.00 |
| 100 - 490 | TWD14.20 | TWD142.00 |
| 500 - 1990 | TWD13.40 | TWD134.00 |
| 2000 + | TWD13.10 | TWD131.00 |
* 參考價格
- RS庫存編號:
- 257-9310
- 製造零件編號:
- IRF7404TRPBF
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | -6.7A | |
| Maximum Drain Source Voltage Vds | -20V | |
| Series | HEXFET | |
| Package Type | SO-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 40mΩ | |
| Typical Gate Charge Qg @ Vgs | 33.3nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 2.5W | |
| Maximum Gate Source Voltage Vgs | 12 V | |
| Forward Voltage Vf | -1V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Distrelec Product Id | 304-40-519 | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id -6.7A | ||
Maximum Drain Source Voltage Vds -20V | ||
Series HEXFET | ||
Package Type SO-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 40mΩ | ||
Typical Gate Charge Qg @ Vgs 33.3nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 2.5W | ||
Maximum Gate Source Voltage Vgs 12 V | ||
Forward Voltage Vf -1V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
Distrelec Product Id 304-40-519 | ||
The Infineon IRF series is the strong IRFET power mosfet family is optimized for low RDS (on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness.
Planar cell structure for wide SOA
Optimized for broadest availability from distribution partners
Product qualification according to JEDEC standard
Silicon optimized for applications switching below 100 kHz
Industry standard surface mount power package
Capable of being wave soldered
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