Infineon HEXFET Fifth Generation Type N-Channel MOSFET, 1.9 A, 55 V SOT-223

N
可享批量折扣

小計(1 卷,共 2500 件)*

TWD23,250.00

(不含稅)

TWD24,400.00

(含稅)

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下方訂單 TWD1,300.00(不含稅)成本 TWD500.00。
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  • 加上 2,500 件從 2026年2月23日 起發貨
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單位
每單位
每卷*
2500 - 2500TWD9.30TWD23,250.00
5000 +TWD8.80TWD22,000.00

* 參考價格

RS庫存編號:
257-5538
Distrelec 貨號:
304-40-532
製造零件編號:
IRFL014NTRPBF
製造商:
Infineon
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品牌

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

1.9A

Maximum Drain Source Voltage Vds

55V

Package Type

SOT-223

Series

HEXFET Fifth Generation

Mount Type

Surface

Maximum Drain Source Resistance Rds

0.16Ω

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1V

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

2.1W

Typical Gate Charge Qg @ Vgs

7nC

Maximum Operating Temperature

150°C

Standards/Approvals

Lead-Free

Automotive Standard

No

The Infineon MOSFET is fifth generation HEXFETs from international rectifier utilize advanced processing techniques to achieve extremely low.

Planar cell structure for wide SOA

Optimized for broadest availability from distribution partners

Product qualification according to JEDEC standard

Silicon optimized for applications switching below <100kHz

Industry standard surface mount package

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