Infineon HEXFET Type N-Channel MOSFET, 2.8 A, 55 V Enhancement, 4-Pin SOT-223

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RS庫存編號:
262-6763
製造零件編號:
IRFL024NTRPBF
製造商:
Infineon
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品牌

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

2.8A

Maximum Drain Source Voltage Vds

55V

Series

HEXFET

Package Type

SOT-223

Mount Type

Surface

Pin Count

4

Maximum Drain Source Resistance Rds

0.075Ω

Channel Mode

Enhancement

Forward Voltage Vf

1.3V

Standards/Approvals

No

Automotive Standard

No

The Infineon power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. It provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

Ultra low on-resistance

Dynamic dv/dt rating

Fasts switching

Fully avalanche rated

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