Infineon HEXFET N-Channel MOSFET, 2.8 A, 55 V, 3-Pin SOT-223 IRLL014NPBF

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RS庫存編號:
302-000
製造零件編號:
IRLL014NPBF
製造商:
Infineon
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品牌

Infineon

Channel Type

N

Maximum Continuous Drain Current

2.8 A

Maximum Drain Source Voltage

55 V

Series

HEXFET

Package Type

SOT-223

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

140 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

2.1 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-16 V, +16 V

Width

3.7mm

Transistor Material

Si

Number of Elements per Chip

1

Typical Gate Charge @ Vgs

9.5 nC @ 10 V

Length

6.7mm

Maximum Operating Temperature

+150 °C

Height

1.7mm

Minimum Operating Temperature

-55 °C

Infineon HEXFET Series MOSFET, 2.8A Maximum Continuous Drain Current, 2.1W Maximum Power Dissipation - IRLL014NTRPBF


This MOSFET from Infineon, part of the HEXFET family, is engineered for high performance in various electrical and electronic applications. As an N-channel device operating in enhancement mode, it plays a VITAL role in power management for devices that demand high reliability in challenging conditions. Advanced technologies are integrated to manage substantial electrical loads effectively while keeping a Compact design.

Features & Benefits


• Maximum continuous drain current of 2.8A for dependable performance

• Wide voltage range up to 55V for diverse applications

• Low drain-source on-resistance of 280mΩ minimises power losses

• High thermal stability with a maximum operating temperature of +150°C

• Enhanced gate threshold voltage options to improve switching capabilities

• Designed for surface mount applications, aiding PCB integration

Applications


• Utilised in automation systems for effective motor control

• Employed in power supply circuits for efficient voltage regulation

• Suitable for switching in electronic devices

• Integrated into battery management systems for optimised energy use

• Applicable in LED drivers to enhance control efficiency

What is the recommended mounting technique for optimal performance?


Utilising surface mount techniques ensures improved thermal performance and space efficiency on printed circuit boards.

How should the maximum gate-source voltage be considered when designing circuits?


It is important to maintain the gate-source voltage within the specified limits of -16V to +16V to ensure device integrity and performance.

Can this component handle high temperatures in operational environments?


It is rated for operation in environments up to +150°C, making it suitable for high-temperature applications.

Is it compatible with low-voltage battery systems?


Yes, it can manage low-voltage applications while providing effective power control and switching efficiency.

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