Infineon HEXFET Type N-Channel MOSFET, 5.2 A, 55 V Enhancement, 4-Pin SOT-223 IRLL2705TRPBF
- RS庫存編號:
- 830-3304
- 製造零件編號:
- IRLL2705TRPBF
- 製造商:
- Infineon
此圖片僅供參考,請參閲產品詳細資訊及規格
可享批量折扣
小計(1 包,共 20 件)*
TWD436.00
(不含稅)
TWD457.80
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 加上 200 件從 2026年1月05日 起發貨
- 加上 600 件從 2026年1月12日 起發貨
**需要更多嗎?**輸入您需要的數量,然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每包* |
|---|---|---|
| 20 - 620 | TWD21.80 | TWD436.00 |
| 640 - 1240 | TWD18.50 | TWD370.00 |
| 1260 + | TWD18.10 | TWD362.00 |
* 參考價格
- RS庫存編號:
- 830-3304
- 製造零件編號:
- IRLL2705TRPBF
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 5.2A | |
| Maximum Drain Source Voltage Vds | 55V | |
| Package Type | SOT-223 | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 65mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 16 V | |
| Maximum Power Dissipation Pd | 2.1W | |
| Forward Voltage Vf | 1.3V | |
| Typical Gate Charge Qg @ Vgs | 32nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Length | 6.7mm | |
| Standards/Approvals | No | |
| Width | 3.7 mm | |
| Height | 1.739mm | |
| Distrelec Product Id | 304-44-474 | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 5.2A | ||
Maximum Drain Source Voltage Vds 55V | ||
Package Type SOT-223 | ||
Series HEXFET | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 65mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 16 V | ||
Maximum Power Dissipation Pd 2.1W | ||
Forward Voltage Vf 1.3V | ||
Typical Gate Charge Qg @ Vgs 32nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Length 6.7mm | ||
Standards/Approvals No | ||
Width 3.7 mm | ||
Height 1.739mm | ||
Distrelec Product Id 304-44-474 | ||
Automotive Standard No | ||
Infineon HEXFET Series MOSFET, 5.2A Maximum Continuous Drain Current, 2.1W Maximum Power Dissipation - IRLL2705TRPBF
This high-performance MOSFET is designed for efficient power management across various applications. With an N-channel configuration, it provides excellent switching capabilities, making it suitable for tasks that require quick response and minimised energy loss. This component enhances the efficiency and reliability of electronic circuits, especially in automation and control systems.
Features & Benefits
• Maximum continuous drain current of 5.2A
• Drain-source voltage rating of 55V
• Low Rds(on) of 65mΩ for efficient operation
• Compact SOT-223 package for space-saving designs
Applications
• Ideal for power supply circuits
• Utilised in automotive power management systems
• Commonly employed for switching in high-frequency circuits
• Integrates well in power inverters for renewable energy systems
What is the maximum voltage this component can handle?
The product supports a maximum drain-source voltage of 55V, allowing for robust performance in various applications.
Can it operate at high temperatures?
Yes, it is rated for a maximum operating temperature of +150°C, ensuring reliability in challenging environments.
How does this component manage heat during operation?
With a maximum power dissipation of 2.1W, it effectively manages thermal performance, reducing the risk of overheating.
Is it compatible with standard PCB designs?
This component is suitable for surface mount technology, enabling easy integration into standard PCB layouts.
What makes this a suitable choice for automation projects?
Its Rapid switching capability and low on-resistance contribute to significant energy savings, enhancing the efficiency of automated systems.
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