Infineon HEXFET Type N-Channel MOSFET, 5.2 A, 55 V Enhancement, 4-Pin SOT-223 IRFL4105TRPBF

此圖片僅供參考，請參閲產品詳細資訊及規格

查看所有MOSFETs

小計（1 包，共 20 件）*

TWD312.00

(不含稅)

TWD327.60

(含稅)

Add to Basket
選擇或輸入數量
有庫存
  • 20 件準備從其他地點送貨
  • 加上 2,280 件從 2026年1月07日 起發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位
每單位
每包*
20 +TWD15.60TWD312.00

* 參考價格

包裝方式：
RS庫存編號:
827-3994
製造零件編號:
IRFL4105TRPBF
製造商:
Infineon
透過選取一個或多個屬性來查找類似產品。
選取全部

品牌

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

5.2A

Maximum Drain Source Voltage Vds

55V

Package Type

SOT-223

Series

HEXFET

Mount Type

Surface

Pin Count

4

Maximum Drain Source Resistance Rds

45mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

2.1W

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.3V

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

23nC

Maximum Operating Temperature

150°C

Standards/Approvals

No

Length

6.7mm

Height

1.8mm

Width

3.7 mm

Automotive Standard

No

Distrelec Product Id

304-44-458

N-Channel Power MOSFET 55V, Infineon


Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range Benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

相關連結