Infineon IPTG Type N-Channel MOSFET, 366 A, 100 V Enhancement, 8-Pin HSOG IPTG014N10NM5ATMA1

此圖片僅供參考,請參閲產品詳細資訊及規格

可享批量折扣

小計(1 包,共 2 件)*

TWD299.00

(不含稅)

TWD313.96

(含稅)

Add to Basket
選擇或輸入數量
暫時缺貨
  • 970 件從 2026年5月18日 起裝運發貨
**需要更多嗎?**輸入您需要的數量,然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。

單位
每單位
每包*
2 - 8TWD149.50TWD299.00
10 - 98TWD146.50TWD293.00
100 - 248TWD143.50TWD287.00
250 - 498TWD140.50TWD281.00
500 +TWD131.50TWD263.00

* 參考價格

包裝方式:
RS庫存編號:
233-4387
製造零件編號:
IPTG014N10NM5ATMA1
製造商:
Infineon
透過選取一個或多個屬性來查找類似產品。
選取全部

品牌

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

366A

Maximum Drain Source Voltage Vds

100V

Package Type

HSOG

Series

IPTG

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

1.4mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1V

Maximum Power Dissipation Pd

375W

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

169nC

Maximum Operating Temperature

175°C

Standards/Approvals

No

Length

10.1mm

Height

2.4mm

Automotive Standard

No

The Infineon OptiMOS power MOSFET IPTG014N10NM5 comes in the improved TO-Leaded package with gullwing leads. With a compatible footprint to TO-Leadless, TOLG allows excellent electrical performance compared to D2PAK 7-pin with ∼60 percent board space reduction. This new package in OptiMOS 5 - 100 V offers very low RDS(on) and is optimized to handle high current 300 A. The flexibility of gullwing leads, OptiMOS in TOLG package shows excellent solder joint reliability on Al-IMS board.

High efficiency and lower EMI

High performance capability

相關連結