Infineon IPTG Type N-Channel MOSFET, 366 A, 100 V Enhancement, 8-Pin HSOG IPTG014N10NM5ATMA1

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2 - 8TWD221.50TWD443.00
10 - 98TWD217.00TWD434.00
100 - 248TWD212.50TWD425.00
250 - 498TWD208.00TWD416.00
500 +TWD195.00TWD390.00

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包裝方式:
RS庫存編號:
233-4387
製造零件編號:
IPTG014N10NM5ATMA1
製造商:
Infineon
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品牌

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

366A

Maximum Drain Source Voltage Vds

100V

Series

IPTG

Package Type

HSOG

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

1.4mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

375W

Typical Gate Charge Qg @ Vgs

169nC

Forward Voltage Vf

1V

Maximum Operating Temperature

175°C

Height

2.4mm

Standards/Approvals

No

Length

10.1mm

Automotive Standard

No

The Infineon OptiMOS power MOSFET IPTG014N10NM5 comes in the improved TO-Leaded package with gullwing leads. With a compatible footprint to TO-Leadless, TOLG allows excellent electrical performance compared to D2PAK 7-pin with ∼60 percent board space reduction. This new package in OptiMOS 5 - 100 V offers very low RDS(on) and is optimized to handle high current 300 A. The flexibility of gullwing leads, OptiMOS in TOLG package shows excellent solder joint reliability on Al-IMS board.

High efficiency and lower EMI

High performance capability

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