Infineon IPTG Type N-Channel MOSFET, 77 A, 250 V Enhancement, 8-Pin HSOG

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RS庫存編號:
233-4390
製造零件編號:
IPTG210N25NM3FDATMA1
製造商:
Infineon
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品牌

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

77A

Maximum Drain Source Voltage Vds

250V

Series

IPTG

Package Type

HSOG

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

21mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.2V

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

65nC

Maximum Power Dissipation Pd

375W

Maximum Operating Temperature

175°C

Height

2.4mm

Width

8.75 mm

Standards/Approvals

No

Length

10.1mm

Automotive Standard

No

The Infineon OptiMOS power MOSFET IPTG210N25NM3FD comes in the improved TO-Leaded package with gullwing leads. With a compatible footprint to TO-Leadless, TOLG allows excellent electrical performance compared to D2PAK 7-pin with ∼60 percent board space reduction. This new package in OptiMOS 3 - 250 V offers very low RDS(on) and is optimized to handle high current 300 A. The flexibility of gullwing leads, OptiMOS in TOLG package shows excellent solder joint reliability on Al-IMS board.

High efficiency and lower EMI

High performance capability

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