Infineon IPTG Type N-Channel MOSFET, 108 A, 200 V Enhancement, 8-Pin HSOG

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TWD294,264.00

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  • 2026年9月28日 發貨
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9000 +TWD151.00TWD271,800.00

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RS庫存編號:
233-4388
製造零件編號:
IPTG111N20NM3FDATMA1
製造商:
Infineon
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品牌

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

108A

Maximum Drain Source Voltage Vds

200V

Package Type

HSOG

Series

IPTG

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

11.1mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

63nC

Forward Voltage Vf

1.2V

Maximum Power Dissipation Pd

375W

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Length

10.1mm

Standards/Approvals

No

Height

2.4mm

Automotive Standard

No

The Infineon OptiMOS power MOSFET IPTG111N20NM3FD comes in the improved TO-Leaded package with gullwing leads. With a compatible footprint to TO-Leadless, TOLG allows excellent electrical performance compared to D2PAK 7-pin with ∼60 percent board space reduction. This new package in OptiMOS 3 - 200 V offers very low RDS(on) and is optimized to handle high current 300 A. The flexibility of gullwing leads, OptiMOS in TOLG package shows excellent solder joint reliability on Al-IMS board.

High efficiency and lower EMI

High performance capability

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