Infineon IPTG Type N-Channel MOSFET, 454 A, 60 V Enhancement, 8-Pin HSOG IPTG007N06NM5ATMA1

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TWD489.00

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TWD513.44

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2 - 8TWD244.50TWD489.00
10 - 98TWD239.50TWD479.00
100 - 248TWD234.00TWD468.00
250 - 498TWD230.00TWD460.00
500 +TWD214.00TWD428.00

* 參考價格

包裝方式:
RS庫存編號:
233-4382
製造零件編號:
IPTG007N06NM5ATMA1
製造商:
Infineon
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品牌

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

454A

Maximum Drain Source Voltage Vds

60V

Package Type

HSOG

Series

IPTG

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.75mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

375W

Forward Voltage Vf

1V

Typical Gate Charge Qg @ Vgs

216nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Length

10.1mm

Height

2.4mm

Standards/Approvals

No

Automotive Standard

No

The Infineon OptiMOS power MOSFET IPTG007N06NM5 comes in the improved TO-Leaded package with gullwing leads. With a compatible footprint to TO-Leadless, TOLG allows excellent electrical performance compared to D2PAK 7-pin with ∼60 percent board space reduction. This new package in OptiMOS 5 - 60 V offers very low RDS(on) and is optimized to handle high current 300 A. The flexibility of gullwing leads, OptiMOS in TOLG package shows excellent solder joint reliability on Al-IMS board. This result in 2x higher thermal cycling on board

High efficiency and lower EMI

High performance capability

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