Infineon IPTG Type N-Channel MOSFET, 408 A, 80 V Enhancement, 8-Pin HSOG

此圖片僅供參考,請參閲產品詳細資訊及規格

可享批量折扣

小計(1 卷,共 1800 件)*

TWD223,560.00

(不含稅)

TWD234,738.00

(含稅)

Add to Basket
選擇或輸入數量
暫時缺貨
  • 2026年5月28日 發貨
**需要更多嗎?**輸入您需要的數量,然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位
每單位
每卷*
1800 - 1800TWD124.20TWD223,560.00
3600 - 3600TWD121.70TWD219,060.00
5400 +TWD119.30TWD214,740.00

* 參考價格

RS庫存編號:
233-4384
製造零件編號:
IPTG011N08NM5ATMA1
製造商:
Infineon
透過選取一個或多個屬性來查找類似產品。
選取全部

品牌

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

408A

Maximum Drain Source Voltage Vds

80V

Package Type

HSOG

Series

IPTG

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

1.1mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

178nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

375W

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

1V

Maximum Operating Temperature

175°C

Height

2.4mm

Standards/Approvals

No

Width

8.75 mm

Length

10.1mm

Automotive Standard

No

The Infineon OptiMOS power MOSFET IPTG011N08NM5 comes in the improved TO-Leaded package with gullwing leads. With a compatible footprint to TO-Leadless, TOLG allows excellent electrical performance compared to D2PAK 7-pin with ∼60 percent board space reduction. This new package in OptiMOS 5 - 80 V offers very low RDS(on) and is optimized to handle high current 300 A. The flexibility of gullwing leads, OptiMOS in TOLG package shows excellent solder joint reliability on Al-IMS board. This result in 2x higher thermal cycling on board

High efficiency and lower EMI

High performance capability

相關連結