Infineon HEXFET Type N-Channel MOSFET, 56 A, 100 V, 3-Pin TO-252 IRFR3710ZTRLPBF
- RS庫存編號:
- 214-4457
- 製造零件編號:
- IRFR3710ZTRLPBF
- 製造商:
- Infineon
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可享批量折扣
小計（1 包，共 15 件）*
TWD682.50
(不含稅)
TWD716.70
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 加上 2,220 件從 2026年1月05日 起發貨
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單位 | 每單位 | 每包* |
|---|---|---|
| 15 - 735 | TWD45.50 | TWD682.50 |
| 750 - 1485 | TWD44.30 | TWD664.50 |
| 1500 + | TWD43.70 | TWD655.50 |
* 參考價格
- RS庫存編號:
- 214-4457
- 製造零件編號:
- IRFR3710ZTRLPBF
- 製造商:
- Infineon
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 56A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | TO-252 | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 18mΩ | |
| Typical Gate Charge Qg @ Vgs | 100nC | |
| Maximum Power Dissipation Pd | 140W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1.3V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 56A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type TO-252 | ||
Series HEXFET | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 18mΩ | ||
Typical Gate Charge Qg @ Vgs 100nC | ||
Maximum Power Dissipation Pd 140W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1.3V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
This HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating .
Its design is extremely efficient and reliable
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