Infineon HEXFET Type N-Channel MOSFET, 61 A, 55 V TO-252 IRLR3915TRPBF

此圖片僅供參考,請參閲產品詳細資訊及規格

可享批量折扣

小計(1 包,共 2 件)*

TWD102.00

(不含稅)

TWD107.10

(含稅)

Add to Basket
選擇或輸入數量
下方訂單 TWD1,300.00(不含稅)成本 TWD500.00。
有庫存
  • 加上 1,472 件從 2026年2月23日 起發貨
**需要更多嗎?**輸入您需要的數量,然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位
每單位
每包*
2 - 8TWD51.00TWD102.00
10 - 98TWD49.00TWD98.00
100 - 248TWD45.50TWD91.00
250 - 498TWD43.00TWD86.00
500 +TWD39.50TWD79.00

* 參考價格

包裝方式:
RS庫存編號:
258-3999
Distrelec 貨號:
304-40-553
製造零件編號:
IRLR3915TRPBF
製造商:
Infineon
透過選取一個或多個屬性來查找類似產品。
選取全部

品牌

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

61A

Maximum Drain Source Voltage Vds

55V

Series

HEXFET

Package Type

TO-252

Mount Type

Surface

Maximum Drain Source Resistance Rds

17mΩ

Maximum Gate Source Voltage Vgs

16 V

Typical Gate Charge Qg @ Vgs

61nC

Forward Voltage Vf

1.3V

Maximum Power Dissipation Pd

120W

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

No

The Infineon HEXFET power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this product are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.

Advanced Process Technology

Ultra Low On-Resistance

Fast Switching

相關連結