製造零件編號

Infineon HEXFET Type N-Channel MOSFET, 56 A, 100 V, 3-Pin TO-252

RS庫存編號:: 214-4456
製造零件編號:: IRFR3710ZTRLPBF
製造商:: Infineon

Infineon HEXFET Type N-Channel MOSFET, 56 A, 100 V, 3-Pin TO-252

此圖片僅供參考，請參閲產品詳細資訊及規格

可享批量折扣

小計（1 卷，共 3000 件）*

TWD69,000.00

(不含稅)

TWD72,450.00

訂單超過 $1,300.00 免費送貨

暫時缺貨

從 2026年4月06日發貨

**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。

單位	每單位	每卷*
3000 - 12000	TWD23.00	TWD69,000.00
15000 +	TWD22.30	TWD66,900.00

* 參考價格

RS庫存編號:: 214-4456
製造零件編號:: IRFR3710ZTRLPBF
製造商:: Infineon

規格

產品概覽和技術數據資料表

法例與合規

產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	56A
	Maximum Drain Source Voltage Vds	100V
	Series	HEXFET
	Package Type	TO-252
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	18mΩ
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	20 V
	Forward Voltage Vf	1.3V
	Maximum Power Dissipation Pd	140W
	Typical Gate Charge Qg @ Vgs	100nC
	Maximum Operating Temperature	175°C
	Standards/Approvals	No
	Automotive Standard	No

	選取全部
	品牌 Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 56A
	Maximum Drain Source Voltage Vds 100V
	Series HEXFET
	Package Type TO-252
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 18mΩ
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 20 V
	Forward Voltage Vf 1.3V
	Maximum Power Dissipation Pd 140W
	Typical Gate Charge Qg @ Vgs 100nC
	Maximum Operating Temperature 175°C
	Standards/Approvals No
	Automotive Standard No

Datasheet - IRFR3710ZTRLPBF

This HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating .

Its design is extremely efficient and reliable

Infineon HEXFET Type N-Channel MOSFET, 56 A, 100 V, 3-Pin TO-252

訂單超過 $1,300.00 免費送貨

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