Infineon HEXFET Type N-Channel MOSFET, 56 A, 100 V TO-252 IRFR3710ZTRPBF
- RS庫存編號:
- 257-5855
- 製造零件編號:
- IRFR3710ZTRPBF
- 製造商:
- Infineon
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可享批量折扣
小計（1 包，共 5 件）*
TWD224.00
(不含稅)
TWD235.20
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 加上 2,425 件從 2026年1月05日 起發貨
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單位 | 每單位 | 每包* |
|---|---|---|
| 5 - 45 | TWD44.80 | TWD224.00 |
| 50 - 95 | TWD42.40 | TWD212.00 |
| 100 - 245 | TWD40.00 | TWD200.00 |
| 250 - 995 | TWD37.20 | TWD186.00 |
| 1000 + | TWD34.00 | TWD170.00 |
* 參考價格
- RS庫存編號:
- 257-5855
- 製造零件編號:
- IRFR3710ZTRPBF
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 56A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | HEXFET | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Maximum Drain Source Resistance Rds | 18mΩ | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 140W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1.3V | |
| Typical Gate Charge Qg @ Vgs | 69nC | |
| Maximum Operating Temperature | 175°C | |
| Height | 10.41mm | |
| Width | 2.39 mm | |
| Length | 6.73mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Distrelec Product Id | 304-40-539 | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 56A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series HEXFET | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Maximum Drain Source Resistance Rds 18mΩ | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 140W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1.3V | ||
Typical Gate Charge Qg @ Vgs 69nC | ||
Maximum Operating Temperature 175°C | ||
Height 10.41mm | ||
Width 2.39 mm | ||
Length 6.73mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
Distrelec Product Id 304-40-539 | ||
The Infineon HEXFET power MOSFET is utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.
Advanced process technology
Ultra low on-resistance
175°C operating temperature
Fast switching
Repetitive avalanche allowed up to Tjmax
Multiple package options
Lead-free
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