Infineon HEXFET N-Channel MOSFET, 100 A, 20 V TO-252
- RS庫存編號:
- 257-9461
- 製造零件編號:
- IRLR6225TRPBF
- 製造商:
- Infineon
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- RS庫存編號:
- 257-9461
- 製造零件編號:
- IRLR6225TRPBF
- 製造商:
- Infineon
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 100A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | TO-252 | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Maximum Drain Source Resistance Rds | 4mΩ | |
| Maximum Gate Source Voltage Vgs | 12V | |
| Maximum Power Dissipation Pd | 63W | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 48nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 100A | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type TO-252 | ||
Series HEXFET | ||
Mount Type Surface | ||
Maximum Drain Source Resistance Rds 4mΩ | ||
Maximum Gate Source Voltage Vgs 12V | ||
Maximum Power Dissipation Pd 63W | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 48nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon IRLR series is the 20V single n channel HEXFET power mosfet in a D-Pak package.
Optimized for broadest availability from distribution partners
Product qualification according to JEDEC standard
Industry standard surface mount power package
Capable of being wave soldered
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