Vishay SiHB17N80E Type N-Channel MOSFET, 15 A, 800 V Enhancement, 3-Pin TO-263
- RS庫存編號:
- 204-7226
- 製造零件編號:
- SIHB17N80E-GE3
- 製造商:
- Vishay
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 卷，共 1000 件）*
TWD100,600.00
(不含稅)
TWD105,630.00
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2026年6月03日 發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每卷* |
|---|---|---|
| 1000 - 4000 | TWD100.60 | TWD100,600.00 |
| 5000 + | TWD98.60 | TWD98,600.00 |
* 參考價格
- RS庫存編號:
- 204-7226
- 製造零件編號:
- SIHB17N80E-GE3
- 製造商:
- Vishay
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 15A | |
| Maximum Drain Source Voltage Vds | 800V | |
| Series | SiHB17N80E | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 290mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 122nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 208W | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Width | 4.83 mm | |
| Standards/Approvals | No | |
| Height | 15.88mm | |
| Length | 10.67mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 15A | ||
Maximum Drain Source Voltage Vds 800V | ||
Series SiHB17N80E | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 290mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 122nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 208W | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Width 4.83 mm | ||
Standards/Approvals No | ||
Height 15.88mm | ||
Length 10.67mm | ||
Automotive Standard No | ||
The Vishay E Series Power MOSFET has a low figure-of-merit (FOM) Ron x Qg and a low input capacitance (Ciss).
Ultra low gate charge (Qg)
Avalanche energy rated (UIS)
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