製造零件編號

Vishay E Type N-Channel MOSFET, 21 A, 800 V Enhancement, 3-Pin TO-263

RS庫存編號:: 228-2846
製造零件編號:: SIHB24N80AE-GE3
製造商:: Vishay

Vishay E Type N-Channel MOSFET, 21 A, 800 V Enhancement, 3-Pin TO-263

此圖片僅供參考，請參閲產品詳細資訊及規格

可享批量折扣

小計（1 管，共 50 件）*

TWD3,130.00

(不含稅)

TWD3,286.50

訂單超過 $1,300.00 免費送貨

最後的 RS 庫存

最終 900 個，準備發貨

單位	每單位	每管*
50 - 50	TWD62.60	TWD3,130.00
100 - 450	TWD61.10	TWD3,055.00
500 - 950	TWD59.50	TWD2,975.00
1000 +	TWD58.30	TWD2,915.00

* 參考價格

RS庫存編號:: 228-2846
製造零件編號:: SIHB24N80AE-GE3
製造商:: Vishay

規格

產品概覽和技術數據資料表

法例與合規

產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Vishay
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	21A
	Maximum Drain Source Voltage Vds	800V
	Package Type	TO-263
	Series	E
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	184mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	30 V
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	208W
	Forward Voltage Vf	1.2V
	Typical Gate Charge Qg @ Vgs	59nC
	Maximum Operating Temperature	150°C
	Standards/Approvals	No
	Automotive Standard	No

	選取全部
	品牌 Vishay
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 21A
	Maximum Drain Source Voltage Vds 800V
	Package Type TO-263
	Series E
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 184mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 30 V
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 208W
	Forward Voltage Vf 1.2V
	Typical Gate Charge Qg @ Vgs 59nC
	Maximum Operating Temperature 150°C
	Standards/Approvals No
	Automotive Standard No

Datasheet - SIHB24N80AE-GE3

The Vishay E Series Power MOSFET reduced switching and conduction losses.

Low figure-of-merit (FOM) Ron x Qg

Low effective capacitance (Co(er))

Vishay E Type N-Channel MOSFET, 21 A, 800 V Enhancement, 3-Pin TO-263

訂單超過 $1,300.00 免費送貨

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