Vishay E Type N-Channel Power MOSFET, 13 A, 800 V Enhancement, 3-Pin TO-263 SIHB15N80AE-GE3
- RS庫存編號:
- 210-4969
- 製造零件編號:
- SIHB15N80AE-GE3
- 製造商:
- Vishay
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可享批量折扣
查看批量定價選項小計（1 管，共 50 件）*
TWD3,130.00
(不含稅)
TWD3,286.50
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 加上 2,950 件從 2026年8月10日 起發貨
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單位 | 每單位 | 每管* |
|---|---|---|
| 50 - 50 | TWD62.60 | TWD3,130.00 |
| 100 - 150 | TWD61.20 | TWD3,060.00 |
| 200 + | TWD59.80 | TWD2,990.00 |
* 參考價格
- RS庫存編號:
- 210-4969
- 製造零件編號:
- SIHB15N80AE-GE3
- 製造商:
- Vishay
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Channel Type | Type N | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 13A | |
| Maximum Drain Source Voltage Vds | 800V | |
| Series | E | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 304mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 35nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 156W | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Maximum Operating Temperature | 150°C | |
| Width | 9.65mm | |
| Standards/Approvals | RoHS | |
| Length | 14.61mm | |
| Height | 4.06mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Channel Type Type N | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 13A | ||
Maximum Drain Source Voltage Vds 800V | ||
Series E | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 304mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 35nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 156W | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 30V | ||
Maximum Operating Temperature 150°C | ||
Width 9.65mm | ||
Standards/Approvals RoHS | ||
Length 14.61mm | ||
Height 4.06mm | ||
Automotive Standard No | ||
Vishay Series E Power MOSFET, 800V Drain Source Voltage, 13A Continuous Drain Current - SIHB15N80AE-GE3
This power MOSFET is a high-voltage N-channel switch intended for surface-mounted power conversion and control applications. It operates across a wide ambient range and is engineered to handle elevated voltages and thermal loads in demanding electronic systems while meeting RoHS environmental requirements.
Features and Benefits:
• 800V drain rating enables high-voltage switching capability
• 13A continuous drain current supports substantial load currents
• 304mΩ Rds(on) minimises conduction losses during operation
• 156W power dissipation allows for sustained thermal handling
• 35nC typical gate charge aids predictable gate-drive sizing
• 30V gate tolerance permits robust gate-drive voltages
• 13A continuous drain current supports substantial load currents
• 304mΩ Rds(on) minimises conduction losses during operation
• 156W power dissipation allows for sustained thermal handling
• 35nC typical gate charge aids predictable gate-drive sizing
• 30V gate tolerance permits robust gate-drive voltages
Applications
• Used for high-voltage power supplies and converters
• Suitable for industrial motor drive stages
• Ideal for switch-mode power supply primary switches
• Can be used for welding or plasma power control modules
• Used with high-voltage inverters in industrial equipment
• Suitable for industrial motor drive stages
• Ideal for switch-mode power supply primary switches
• Can be used for welding or plasma power control modules
• Used with high-voltage inverters in industrial equipment
What package type should be considered for thermal management on boards?
It is supplied in a TO-263 surface-mount package which offers a low-profile thermal path to PCB copper for heat-sinking.
How does the device behave across temperature extremes?
The device is rated to operate from -55°C up to 150°C, allowing use in both cold-start and high-temperature environments.
What gate-drive limitations must designers observe?
The gate must not exceed ±30V relative to source to avoid damage to the gate oxide and ensure reliable switching.
What forward conduction characteristic is present during body diode conduction?
The intrinsic diode exhibits a forward voltage of approximately 1.2V when conducting in reverse-polarity conditions.
相關連結
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