Vishay E Type N-Channel Power MOSFET, 13 A, 800 V Enhancement, 3-Pin TO-263
- RS庫存編號:
- 210-4969
- 製造零件編號:
- SIHB15N80AE-GE3
- 製造商:
- Vishay
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
查看批量定價選項小計（1 管，共 50 件）*
TWD2,565.00
(不含稅)
TWD2,693.00
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 2,950 件準備從其他地點送貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每管* |
|---|---|---|
| 50 - 50 | TWD51.30 | TWD2,565.00 |
| 100 - 150 | TWD50.20 | TWD2,510.00 |
| 200 + | TWD49.10 | TWD2,455.00 |
* 參考價格
- RS庫存編號:
- 210-4969
- 製造零件編號:
- SIHB15N80AE-GE3
- 製造商:
- Vishay
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Channel Type | Type N | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 13A | |
| Maximum Drain Source Voltage Vds | 800V | |
| Package Type | TO-263 | |
| Series | E | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 304mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 35nC | |
| Maximum Power Dissipation Pd | 156W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Width | 9.65mm | |
| Height | 4.06mm | |
| Length | 14.61mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Channel Type Type N | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 13A | ||
Maximum Drain Source Voltage Vds 800V | ||
Package Type TO-263 | ||
Series E | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 304mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 35nC | ||
Maximum Power Dissipation Pd 156W | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 30V | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Width 9.65mm | ||
Height 4.06mm | ||
Length 14.61mm | ||
Automotive Standard No | ||
Vishay Series E Power MOSFET, 800V Drain Source Voltage, 13A Continuous Drain Current - SIHB15N80AE-GE3
This power MOSFET is a high-voltage N-channel transistor intended for power switching in industrial electronics. It is designed for surface-mount assembly in TO-263 packages and operates across a wide thermal range for demanding applications where robust voltage handling and Compact mounting are required.
Features and Benefits:
• 800V drain rating enables high-voltage switching applications • 13 A continuous drain current supports substantial load currents • 304 mΩ Rds(on) reduces conduction losses during operation • 35 nC typical gate charge enables efficient switching control • 30V maximum gate drive accommodates common gate-drive voltages • 156W power dissipation improves thermal handling under load
Applications
• Suitable for high-voltage motor drive stages in automation systems • Ideal for power supplies requiring Compact surface-mount switches • Used for industrial inverter and converter switching duties • Can be used for high-voltage protection and clamp circuits
What temperature range can it operate across?
It functions from -55 °C up to a maximum junction temperature of 150 °C for high-temperature environments.
What package and mounting method does it use?
It is supplied in a TO-263 package intended for surface-mount installation on boards.
What gate drive limitations should designers observe?
The device must not exceed a gate-to-source voltage of 30V to avoid gate stress.
How does its power dissipation influence thermal design?
The 156W rating guides heatsinking and PCB copper allocation to keep junction temperatures within limits.
What pin configuration is provided?
The component offers a three-pin arrangement compatible with standard power MOSFET layouts.
相關連結
- Vishay E Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-263 SIHB15N80AE-GE3
- Vishay E Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-263
- Vishay E Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-263
- Vishay E Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-263
- Vishay E Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-263 SIHB24N80AE-GE3
- Vishay E Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-263 SIHB21N80AE-GE3
- Vishay E Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-263 SIHB17N80AE-GE3
- Vishay E Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-263 SIHB11N80AE-GE3