Vishay E Type N-Channel Power MOSFET, 15 A, 800 V Enhancement, 3-Pin TO-263 SIHB17N80AE-GE3
- RS庫存編號:
- 210-4971
- 製造零件編號:
- SIHB17N80AE-GE3
- 製造商:
- Vishay
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
查看批量定價選項小計（1 管，共 50 件）*
TWD3,280.00
(不含稅)
TWD3,444.00
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 加上 700 件從 2026年8月10日 起發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每管* |
|---|---|---|
| 50 - 50 | TWD65.60 | TWD3,280.00 |
| 100 - 450 | TWD64.20 | TWD3,210.00 |
| 500 + | TWD57.70 | TWD2,885.00 |
* 參考價格
- RS庫存編號:
- 210-4971
- 製造零件編號:
- SIHB17N80AE-GE3
- 製造商:
- Vishay
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Product Type | Power MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 15A | |
| Maximum Drain Source Voltage Vds | 800V | |
| Package Type | TO-263 | |
| Series | E | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 250mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 179W | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Typical Gate Charge Qg @ Vgs | 41nC | |
| Maximum Operating Temperature | 150°C | |
| Width | 9.65mm | |
| Length | 14.61mm | |
| Standards/Approvals | RoHS | |
| Height | 4.06mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Product Type Power MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 15A | ||
Maximum Drain Source Voltage Vds 800V | ||
Package Type TO-263 | ||
Series E | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 250mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 179W | ||
Maximum Gate Source Voltage Vgs 30V | ||
Typical Gate Charge Qg @ Vgs 41nC | ||
Maximum Operating Temperature 150°C | ||
Width 9.65mm | ||
Length 14.61mm | ||
Standards/Approvals RoHS | ||
Height 4.06mm | ||
Automotive Standard No | ||
Vishay Series E Power MOSFET, 800V Drain Source Voltage, 15A Continuous Drain Current - SIHB17N80AE-GE3
This power MOSFET is a high-voltage N-channel semiconductor device designed for switching and power-conversion duties in surface-mount applications. It operates across a wide temperature range and is intended for use where robust high-voltage switching, moderate current handling and compact SMD packaging are required.
Features and Benefits:
• 800V maximum drain-source voltage enabling high-voltage switching
• 15A continuous drain current for moderate load handling
• 250mΩ Rds(on) minimises conduction losses under load
• 179W power dissipation supports high-power operation
• 41nC typical gate charge for predictable switching behaviour
• 30V maximum gate-source voltage ensures gate drive margin
• 15A continuous drain current for moderate load handling
• 250mΩ Rds(on) minimises conduction losses under load
• 179W power dissipation supports high-power operation
• 41nC typical gate charge for predictable switching behaviour
• 30V maximum gate-source voltage ensures gate drive margin
Applications
• Suitable for SMPS primary-side high-voltage switching
• Ideal for industrial high-voltage power stages
• Used with boost converters requiring 800V devices
• Can be used for power-factor correction front ends
• Ideal for industrial high-voltage power stages
• Used with boost converters requiring 800V devices
• Can be used for power-factor correction front ends
What thermal extremes can this device withstand in operation?
It is specified to operate from -55°C up to 150°C, allowing use in environments with large temperature variations.
What package and mounting style should I plan for on the board?
The device is supplied in a TO-263 package intended for surface mounting to heatsinking areas on the board.
How many electrical connections does it present for layout considerations?
The component has three pins, corresponding to the gate, drain and source terminations for PCB routing.
What is the channel mode and how does it affect switching?
The transistor is an enhancement-mode N-channel device, requiring a positive gate drive relative to the source to switch on.
相關連結
- Vishay E Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-263 SIHB17N80AE-GE3
- Vishay E Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-263
- Vishay E Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-263
- Vishay E Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-263
- Vishay E Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-263 SIHB24N80AE-GE3
- Vishay E Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-263 SIHB21N80AE-GE3
- Vishay E Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-263 SIHB15N80AE-GE3
- Vishay E Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-263 SIHB11N80AE-GE3