Vishay E Type N-Channel Power MOSFET, 15 A, 800 V Enhancement, 3-Pin TO-263 SIHB17N80AE-GE3
- RS庫存編號:
- 210-4972
- 製造零件編號:
- SIHB17N80AE-GE3
- 製造商:
- Vishay
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- RS庫存編號:
- 210-4972
- 製造零件編號:
- SIHB17N80AE-GE3
- 製造商:
- Vishay
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Channel Type | Type N | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 15A | |
| Maximum Drain Source Voltage Vds | 800V | |
| Series | E | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 250mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 41nC | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 179W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Length | 14.61mm | |
| Standards/Approvals | RoHS | |
| Width | 9.65mm | |
| Height | 4.06mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Channel Type Type N | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 15A | ||
Maximum Drain Source Voltage Vds 800V | ||
Series E | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 250mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 41nC | ||
Maximum Gate Source Voltage Vgs 30V | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 179W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Length 14.61mm | ||
Standards/Approvals RoHS | ||
Width 9.65mm | ||
Height 4.06mm | ||
Automotive Standard No | ||
Vishay Series E Power MOSFET, 800V Drain Source Voltage, 15A Continuous Drain Current - SIHB17N80AE-GE3
This power MOSFET is a high-voltage N-channel device designed for switching and power-conversion roles in industrial and electronic systems. It operates as an enhancement-mode transistor and is supplied in a TO-263 surface-mount package for use on populated circuit boards. The component is intended for applications requiring high drain-source voltage handling and Compact thermal management.
Features and Benefits:
• 800V drain-source rating enables high-voltage switching
• 15A continuous drain current supports substantial load currents
• 250 mΩ Rds(on) reduces conduction losses under load
• 179W power dissipation capacity aids thermal stability
• 41 nC typical gate charge ensures Faster switching transitions
• Vgs limit of 30V protects gate from overvoltage
• 15A continuous drain current supports substantial load currents
• 250 mΩ Rds(on) reduces conduction losses under load
• 179W power dissipation capacity aids thermal stability
• 41 nC typical gate charge ensures Faster switching transitions
• Vgs limit of 30V protects gate from overvoltage
Applications
• Suitable for high-voltage SMPS primary-side switching
• Ideal for industrial motor drive-stage switching
• Used for power-factor-correction front-end converters
• Can be used for inverter and UPS high-voltage sections
• Ideal for industrial motor drive-stage switching
• Used for power-factor-correction front-end converters
• Can be used for inverter and UPS high-voltage sections
What temperature range can it operate within?
It functions across ambient extremes from -55 °C to a maximum operating temperature of 150 °C, suitable for elevated-temperature environments.
How many electrical connections does it present to the PCB?
The device provides three electrical pins consistent with common MOSFET topology for drain, gate and source connections.
What packaging considerations affect heat dissipation?
The TO-263 surface-mount package offers a low-profile thermal path to the PCB and is intended for attachment to a suitably sized copper land for heat spreading.
Is it suitable for automotive-qualified designs?
It is not specified as automotive-standard compliant and should be evaluated accordingly for vehicle applications.
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- Vishay E Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-263
- Vishay E Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-263
- Vishay E Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-263