onsemi NVH Type N-Channel MOSFET, 17.3 A, 1200 V Enhancement, 4-Pin TO-247
- RS庫存編號:
- 202-5741
- 製造零件編號:
- NVH4L160N120SC1
- 製造商:
- onsemi
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 管，共 450 件）*
TWD111,465.00
(不含稅)
TWD117,036.00
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2026年4月01日 發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每管* |
|---|---|---|
| 450 - 1800 | TWD247.70 | TWD111,465.00 |
| 2250 + | TWD235.30 | TWD105,885.00 |
* 參考價格
- RS庫存編號:
- 202-5741
- 製造零件編號:
- NVH4L160N120SC1
- 製造商:
- onsemi
規格
產品概覽和技術數據資料表
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 17.3A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Package Type | TO-247 | |
| Series | NVH | |
| Mount Type | Through Hole | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 160mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 4V | |
| Typical Gate Charge Qg @ Vgs | 34nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 25 V | |
| Maximum Power Dissipation Pd | 111W | |
| Maximum Operating Temperature | 175°C | |
| Width | 5.2 mm | |
| Length | 15.8mm | |
| Height | 22.74mm | |
| Standards/Approvals | AEC-Q101 and PPAP Capable | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 17.3A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Package Type TO-247 | ||
Series NVH | ||
Mount Type Through Hole | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 160mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 4V | ||
Typical Gate Charge Qg @ Vgs 34nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 25 V | ||
Maximum Power Dissipation Pd 111W | ||
Maximum Operating Temperature 175°C | ||
Width 5.2 mm | ||
Length 15.8mm | ||
Height 22.74mm | ||
Standards/Approvals AEC-Q101 and PPAP Capable | ||
Automotive Standard AEC-Q101 | ||
Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 160 mohm, 1200 V, M1, TO247−4L
The ON Semiconductor Silicon Carbide Power MOSFET runs with 17.3 Ampere and 1200 Volts. It can be used in Automotive on board charger, DC or DC Converter applications.
AEC Q101 qualified
100% avalanche tested
Low effective output capacitance
RoHS compliant
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