onsemi NTH N-Channel MOSFET, 29 A, 1.2 kV Enhancement, 4-Pin TO-247

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小計(1 管,共 450 件)*

TWD110,430.00

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TWD115,951.50

(含稅)

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每單位
每管*
450 - 1800TWD245.40TWD110,430.00
2250 +TWD240.50TWD108,225.00

* 參考價格

RS庫存編號:
202-5700
製造零件編號:
NTH4L080N120SC1
製造商:
onsemi
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品牌

onsemi

Channel Type

N

Product Type

MOSFET

Maximum Continuous Drain Current Id

29A

Maximum Drain Source Voltage Vds

1.2kV

Series

NTH

Package Type

TO-247

Mount Type

Through Hole

Pin Count

4

Maximum Drain Source Resistance Rds

110mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

25V

Maximum Power Dissipation Pd

170W

Typical Gate Charge Qg @ Vgs

56nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Length

15.2mm

Height

22.74mm

Width

5.2mm

Standards/Approvals

RoHS

Automotive Standard

No

Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M1, TO-247-4L Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M1, TO-247-4L


The ON Semiconductor Silicon Carbide Power MOSFET runs with 29 Ampere and 1200 Volts. It can be used in uninterruptible power supply, Boost inverter, Industrial Motor Drive, PV Charger.

110mO drain to source on resistance

Ultra low gate charge

100% avalanche tested

Pb free

RoHS compliant

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