onsemi NTH Type N-Channel MOSFET, 17.3 A, 1200 V Enhancement, 4-Pin TO-247

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RS庫存編號:
202-5702
製造零件編號:
NTH4L160N120SC1
製造商:
onsemi
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品牌

onsemi

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

17.3A

Maximum Drain Source Voltage Vds

1200V

Package Type

TO-247

Series

NTH

Mount Type

Through Hole

Pin Count

4

Maximum Drain Source Resistance Rds

224mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

34nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

25 V

Maximum Power Dissipation Pd

111W

Forward Voltage Vf

4V

Maximum Operating Temperature

175°C

Width

5.2 mm

Length

18.62mm

Height

22.74mm

Standards/Approvals

RoHS

Automotive Standard

No

Silicon Carbide (SiC) MOSFET - EliteSiC, 160 mohm, 1200 V, M1, TO-247-4L Silicon Carbide (SiC) MOSFET - EliteSiC, 160 mohm, 1200 V, M1, TO-247-4L


The ON Semiconductor Silicon Carbide Power MOSFET runs with 17.3 Ampere and 1200 Volts. It can be used in uninterruptible power supply, DC/DC Converter, boost inverter.

160mO drain to source on resistance

Ultra low gate charge

100% avalanche tested

Pb free

RoHS compliant

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