製造零件編號

onsemi NTH Type N-Channel MOSFET, 58 A, 1200 V Enhancement, 7-Pin TO-247

RS庫存編號:: 254-7669
製造零件編號:: NTH4L025N065SC1
製造商:: onsemi

onsemi NTH Type N-Channel MOSFET, 58 A, 1200 V Enhancement, 7-Pin TO-247

此圖片僅供參考，請參閲產品詳細資訊及規格

可享批量折扣

小計（1 管，共 450 件）*

TWD200,205.00

(不含稅)

TWD210,213.00

訂單超過 $1,300.00 免費送貨

暫時缺貨

從 2026年5月15日發貨

**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。

單位	每單位	每管*
450 - 450	TWD444.90	TWD200,205.00
900 +	TWD436.00	TWD196,200.00

* 參考價格

RS庫存編號:: 254-7669
製造零件編號:: NTH4L025N065SC1
製造商:: onsemi

規格

產品概覽和技術數據資料表

法例與合規

產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	onsemi
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	58A
	Maximum Drain Source Voltage Vds	1200V
	Series	NTH
	Package Type	TO-247
	Mount Type	Through Hole
	Pin Count	7
	Maximum Drain Source Resistance Rds	22mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	4.5V
	Typical Gate Charge Qg @ Vgs	164nC
	Maximum Power Dissipation Pd	117W
	Maximum Gate Source Voltage Vgs	22 V
	Maximum Operating Temperature	175°C
	Standards/Approvals	RoHS with exemption 7a, Pb-Free 2LI
	Automotive Standard	AEC-Q101

	選取全部
	品牌 onsemi
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 58A
	Maximum Drain Source Voltage Vds 1200V
	Series NTH
	Package Type TO-247
	Mount Type Through Hole
	Pin Count 7
	Maximum Drain Source Resistance Rds 22mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 4.5V
	Typical Gate Charge Qg @ Vgs 164nC
	Maximum Power Dissipation Pd 117W
	Maximum Gate Source Voltage Vgs 22 V
	Maximum Operating Temperature 175°C
	Standards/Approvals RoHS with exemption 7a, Pb-Free 2LI
	Automotive Standard AEC-Q101

Datasheet - NTH4L025N065SC1

Silicon Carbide (SiC) MOSFET - EliteSiC, 19 mohm, 650 V, M2, TO-247-4L Silicon Carbide (SiC) MOSFET - 19 mohm, 650 V, M2, TO247−4L

The ON Semiconductor NTH series of a silicon carbide mosfet uses a completely new technology that provide superior switching performance and higher reliability compared to silicon. In addition with the low on resistance and compact chip size. It ensures a low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.

Used in telecommunication

Ultra low gate charge

High speed switching and low capacitance

onsemi NTH Type N-Channel MOSFET, 58 A, 1200 V Enhancement, 7-Pin TO-247

訂單超過 $1,300.00 免費送貨

Silicon Carbide (SiC) MOSFET - EliteSiC, 19 mohm, 650 V, M2, TO-247-4L Silicon Carbide (SiC) MOSFET - 19 mohm, 650 V, M2, TO247−4L

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