onsemi NVH Type N-Channel MOSFET, 102 A, 1200 V Enhancement, 4-Pin TO-247 NVH4L020N120SC1

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包裝方式:
RS庫存編號:
202-5735
製造零件編號:
NVH4L020N120SC1
製造商:
onsemi
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品牌

onsemi

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

102A

Maximum Drain Source Voltage Vds

1200V

Series

NVH

Package Type

TO-247

Mount Type

Through Hole

Pin Count

4

Maximum Drain Source Resistance Rds

28mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

220nC

Maximum Gate Source Voltage Vgs

25 V

Maximum Power Dissipation Pd

510W

Maximum Operating Temperature

175°C

Height

22.74mm

Length

15.8mm

Standards/Approvals

AEC-Q101 and PPAP Capable

Width

5.2 mm

Automotive Standard

No

Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 20 mohm, 1200 V, M1, TO247−4L Silicon Carbide MOSFET, N-Channel, 1200 V, 20 mΩ, TO247-4L


The ON Semiconductor Silicon Carbide Power MOSFET runs with 102 Ampere and 1200 Volts. It can be used in Automotive on board charger, DC or DC Converter applications.

AEC Q101 qualified

Production part approval process Capable

100% avalanche tested

Low effective output capacitance

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