onsemi Type N-Channel MOSFET, 44 A, 1200 V Enhancement, 3-Pin TO-247 NVHL080N120SC1
- RS庫存編號:
- 189-0419
- 製造零件編號:
- NVHL080N120SC1
- 製造商:
- onsemi
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- 從 2026年5月21日 發貨
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* 參考價格
- RS庫存編號:
- 189-0419
- 製造零件編號:
- NVHL080N120SC1
- 製造商:
- onsemi
規格
產品概覽和技術數據資料表
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 44A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 162mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 25 V | |
| Typical Gate Charge Qg @ Vgs | 56nC | |
| Forward Voltage Vf | 4V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 348W | |
| Maximum Operating Temperature | 175°C | |
| Width | 4.82 mm | |
| Standards/Approvals | No | |
| Height | 20.82mm | |
| Length | 15.87mm | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 44A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 162mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 25 V | ||
Typical Gate Charge Qg @ Vgs 56nC | ||
Forward Voltage Vf 4V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 348W | ||
Maximum Operating Temperature 175°C | ||
Width 4.82 mm | ||
Standards/Approvals No | ||
Height 20.82mm | ||
Length 15.87mm | ||
Automotive Standard AEC-Q101 | ||
Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 80 mohm, 1200 V, M1, TO247−3
Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.
1200V rated
Max RDS(on) = 110mΩ at Vgs = 20V, Id = 20A
High Speed Switching and Low Capacitance
Devices are Pb-Free
Applications
PFC
OBC
End Products
Automotive DC/DC converter for EV/PHEV
Automotive On Board Charger
Automotive Auxiliary Motor Drive
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