onsemi FCH067N65S3 Type N-Channel MOSFET, 44 A, 650 V Enhancement, 3-Pin TO-247

RS庫存編號:: 172-3423
製造零件編號:: FCH067N65S3-F155
製造商:: onsemi

onsemi FCH067N65S3 Type N-Channel MOSFET, 44 A, 650 V Enhancement, 3-Pin TO-247

此圖片僅供參考，請參閲產品詳細資訊及規格

可享批量折扣

小計（1 管，共 450 件）*

TWD55,620.00

(不含稅)

TWD58,401.00

訂單超過 $1,300.00 免費送貨

暫時缺貨

從 2026年6月03日發貨

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單位	每單位	每管*
450 - 1800	TWD123.60	TWD55,620.00
2250 +	TWD119.90	TWD53,955.00

* 參考價格

RS庫存編號:: 172-3423
製造零件編號:: FCH067N65S3-F155
製造商:: onsemi

規格

產品概覽和技術數據資料表

法例與合規

產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	onsemi
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	44A
	Maximum Drain Source Voltage Vds	650V
	Package Type	TO-247
	Series	FCH067N65S3
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	67mΩ
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	312W
	Forward Voltage Vf	1.2V
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	30 V
	Typical Gate Charge Qg @ Vgs	78nC
	Maximum Operating Temperature	150°C
	Standards/Approvals	No
	Length	15.87mm
	Width	4.82 mm
	Height	20.82mm
	Automotive Standard	No

	選取全部
	品牌 onsemi
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 44A
	Maximum Drain Source Voltage Vds 650V
	Package Type TO-247
	Series FCH067N65S3
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 67mΩ
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 312W
	Forward Voltage Vf 1.2V
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 30 V
	Typical Gate Charge Qg @ Vgs 78nC
	Maximum Operating Temperature 150°C
	Standards/Approvals No
	Length 15.87mm
	Width 4.82 mm
	Height 20.82mm
	Automotive Standard No

COO (Country of Origin):: CN

SuperFET® III MOSFET is ON Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SuperFET III MOSFET is very suitable for various power system for miniaturization and higher efficiency.

700 V @ TJ = 150 oC

Higher system reliability at low temperature operation

Ultra Low Gate Charge (Typ. Qg = 78 nC)

Lower switching loss

Low Effective Output Capacitance (Typ. Coss(eff.) = 715 pF)

Lower switching loss

Optimized Capacitance

Lower peak Vds and lower Vgs oscillation

Typ. RDS(on) = 62 mΩ

Wave soldering guarantee

Computing

Telecomunication

Industrial

Telecom / Server

Solar inverter / UPS

EVC

onsemi FCH067N65S3 Type N-Channel MOSFET, 44 A, 650 V Enhancement, 3-Pin TO-247

訂單超過 $1,300.00 免費送貨

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