onsemi FCH040N65S3 Type N-Channel MOSFET, 65 A, 650 V Enhancement, 3-Pin TO-247
- RS庫存編號:
- 172-3422
- 製造零件編號:
- FCH040N65S3-F155
- 製造商:
- onsemi
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 管，共 450 件）*
TWD122,760.00
(不含稅)
TWD128,898.00
(含稅)
訂單超過 $1,300.00 免費送貨
最後的 RS 庫存
- 最終 450 個，準備發貨
單位 | 每單位 | 每管* |
|---|---|---|
| 450 - 1800 | TWD272.80 | TWD122,760.00 |
| 2250 + | TWD267.40 | TWD120,330.00 |
* 參考價格
- RS庫存編號:
- 172-3422
- 製造零件編號:
- FCH040N65S3-F155
- 製造商:
- onsemi
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 65A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | TO-247 | |
| Series | FCH040N65S3 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 40mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Maximum Power Dissipation Pd | 417W | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 136nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Height | 20.82mm | |
| Standards/Approvals | No | |
| Width | 4.82 mm | |
| Length | 15.87mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 65A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type TO-247 | ||
Series FCH040N65S3 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 40mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Maximum Power Dissipation Pd 417W | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 136nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Height 20.82mm | ||
Standards/Approvals No | ||
Width 4.82 mm | ||
Length 15.87mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
SuperFET® III MOSFET is ON Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SuperFET III MOSFET is very suitable for various power system for miniaturization and higher efficiency.
700 V @ TJ = 150 oC
Higher system reliability at low temperature operation
Ultra Low Gate Charge (Typ. Qg = 78 nC)
Lower switching loss
Low Effective Output Capacitance (Typ. Coss(eff.) = 715 pF)
Lower switching loss
Optimized Capacitance
Lower peak Vds and lower Vgs oscillation
Typ. RDS(on) = 62 mΩ
Wave soldering guarantee
Computing
Telecomunication
Industrial
Telecom / Server
Solar inverter / UPS
EVC
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