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透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	onsemi
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	60A
	Maximum Drain Source Voltage Vds	1200V
	Package Type	TO-263
	Series	NVB
	Mount Type	Surface
	Pin Count	7
	Maximum Drain Source Resistance Rds	56mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	25 V
	Maximum Power Dissipation Pd	178W
	Typical Gate Charge Qg @ Vgs	106nC
	Maximum Operating Temperature	150°C
	Standards/Approvals	AEC-Q101
	Height	15.7mm
	Length	10.2mm
	Width	4.7 mm
	Automotive Standard	No

	選取全部
	品牌 onsemi
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 60A
	Maximum Drain Source Voltage Vds 1200V
	Package Type TO-263
	Series NVB
	Mount Type Surface
	Pin Count 7
	Maximum Drain Source Resistance Rds 56mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 25 V
	Maximum Power Dissipation Pd 178W
	Typical Gate Charge Qg @ Vgs 106nC
	Maximum Operating Temperature 150°C
	Standards/Approvals AEC-Q101
	Height 15.7mm
	Length 10.2mm
	Width 4.7 mm
	Automotive Standard No

Datasheet - NVBG040N120SC1

Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 40 mohm, 1200 V, M1, D2PAK−7L Silicon Carbide MOSFET, N-Channel, 1200 V, 40 mΩ, D2PAK-7L

The ON Semiconductor Silicon Carbide Power MOSFET runs with 60 Ampere and 1200 Volts. It can be used in Automotive on board charger, DC or DC Converter applications.

AEC Q101 qualified

Production part approval process Capable

100% avalanche tested

Low effective output capacitance

onsemi NVB Type N-Channel MOSFET, 60 A, 1200 V Enhancement, 7-Pin TO-263

Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 40 mohm, 1200 V, M1, D2PAK−7L Silicon Carbide MOSFET, N-Channel, 1200 V, 40 mΩ, D2PAK-7L

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