onsemi NTB Type N-Channel MOSFET, 30 A, 1200 V Enhancement, 7-Pin TO-263 NTBG080N120SC1
- RS庫存編號:
- 205-2450
- 製造零件編號:
- NTBG080N120SC1
- 製造商:
- onsemi
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小計（1 件）*
TWD298.00
(不含稅)
TWD312.90
(含稅)
訂單超過 $1,300.00 免費送貨
最後的 RS 庫存
- 最終 745 個，準備發貨
單位 | 每單位 |
|---|---|
| 1 - 199 | TWD298.00 |
| 200 - 399 | TWD293.00 |
| 400 + | TWD287.00 |
* 參考價格
- RS庫存編號:
- 205-2450
- 製造零件編號:
- NTBG080N120SC1
- 製造商:
- onsemi
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 30A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Series | NTB | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 110mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 179W | |
| Typical Gate Charge Qg @ Vgs | 56nC | |
| Forward Voltage Vf | 3.9V | |
| Maximum Gate Source Voltage Vgs | 25 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | This Device is Pb-Free and is RoHS | |
| Width | 9.7 mm | |
| Length | 15.1mm | |
| Height | 4.3mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 30A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Series NTB | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 110mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 179W | ||
Typical Gate Charge Qg @ Vgs 56nC | ||
Forward Voltage Vf 3.9V | ||
Maximum Gate Source Voltage Vgs 25 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals This Device is Pb-Free and is RoHS | ||
Width 9.7 mm | ||
Length 15.1mm | ||
Height 4.3mm | ||
Automotive Standard No | ||
Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M1, D2PAK-7L Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M1, D2PAK-7L
The ON Semiconductor silicon carbide (SiC) N-Channel MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.
Low on resistance 80mohm type
High Junction temperature
Ultra low gate charge
Low effective output capacitance
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