onsemi NTB Type N-Channel MOSFET, 30 A, 1200 V Enhancement, 7-Pin TO-263
- RS庫存編號:
- 205-2449
- 製造零件編號:
- NTBG080N120SC1
- 製造商:
- onsemi
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- RS庫存編號:
- 205-2449
- 製造零件編號:
- NTBG080N120SC1
- 製造商:
- onsemi
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 30A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Package Type | TO-263 | |
| Series | NTB | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 110mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 25 V | |
| Forward Voltage Vf | 3.9V | |
| Typical Gate Charge Qg @ Vgs | 56nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 179W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | This Device is Pb-Free and is RoHS | |
| Width | 9.7 mm | |
| Length | 15.1mm | |
| Height | 4.3mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 30A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Package Type TO-263 | ||
Series NTB | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 110mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 25 V | ||
Forward Voltage Vf 3.9V | ||
Typical Gate Charge Qg @ Vgs 56nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 179W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals This Device is Pb-Free and is RoHS | ||
Width 9.7 mm | ||
Length 15.1mm | ||
Height 4.3mm | ||
Automotive Standard No | ||
Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M1, D2PAK-7L Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M1, D2PAK-7L
The ON Semiconductor silicon carbide (SiC) N-Channel MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.
Low on resistance 80mohm type
High Junction temperature
Ultra low gate charge
Low effective output capacitance
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