onsemi NTB Type N-Channel MOSFET & Diode, 19.5 A, 1200 V Enhancement, 7-Pin TO-263 NTBG160N120SC1
- RS庫存編號:
- 205-2494
- 製造零件編號:
- NTBG160N120SC1
- 製造商:
- onsemi
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 包，共 5 件）*
TWD1,068.00
(不含稅)
TWD1,121.40
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 1,505 件準備從其他地點送貨
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單位 | 每單位 | 每包* |
|---|---|---|
| 5 - 195 | TWD213.60 | TWD1,068.00 |
| 200 - 395 | TWD208.20 | TWD1,041.00 |
| 400 + | TWD205.00 | TWD1,025.00 |
* 參考價格
- RS庫存編號:
- 205-2494
- 製造零件編號:
- NTBG160N120SC1
- 製造商:
- onsemi
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | onsemi | |
| Product Type | MOSFET & Diode | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 19.5A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Package Type | TO-263 | |
| Series | NTB | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 225mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 136W | |
| Maximum Gate Source Voltage Vgs | 25 V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 33.8nC | |
| Forward Voltage Vf | 3.9V | |
| Maximum Operating Temperature | 150°C | |
| Length | 15.1mm | |
| Width | 9.7 mm | |
| Height | 4.3mm | |
| Standards/Approvals | Pb-Free, RoHS | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 onsemi | ||
Product Type MOSFET & Diode | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 19.5A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Package Type TO-263 | ||
Series NTB | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 225mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 136W | ||
Maximum Gate Source Voltage Vgs 25 V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 33.8nC | ||
Forward Voltage Vf 3.9V | ||
Maximum Operating Temperature 150°C | ||
Length 15.1mm | ||
Width 9.7 mm | ||
Height 4.3mm | ||
Standards/Approvals Pb-Free, RoHS | ||
Automotive Standard AEC-Q101 | ||
Silicon Carbide (SiC) MOSFET - EliteSiC, 160 mohm, 1200 V, M1, D2PAK-7L Silicon Carbide (SiC) MOSFET - EliteSiC, 160 mohm, 1200 V, M1, D2PAK-7L
The ON Semiconductor SiC N-channel 1200V MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.
Continuous Drain Current rating is 19.5A
Drain to source on resistance rating is 224mohm
Ultra Low Gate Charge
High Speed Switching and Low Capacitance
100% Avalanche Tested
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