onsemi NVB Type N-Channel MOSFET, 60 A, 1200 V Enhancement, 7-Pin TO-263 NVBG040N120SC1
- RS庫存編號:
- 202-5731
- 製造零件編號:
- NVBG040N120SC1
- 製造商:
- onsemi
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 包，共 2 件）*
TWD1,417.00
(不含稅)
TWD1,487.84
(含稅)
訂單超過 $1,300.00 免費送貨
最後的 RS 庫存
- 最終 652 個，準備發貨
單位 | 每單位 | 每包* |
|---|---|---|
| 2 - 198 | TWD708.50 | TWD1,417.00 |
| 200 - 398 | TWD690.00 | TWD1,380.00 |
| 400 + | TWD680.00 | TWD1,360.00 |
* 參考價格
- RS庫存編號:
- 202-5731
- 製造零件編號:
- NVBG040N120SC1
- 製造商:
- onsemi
規格
產品概覽和技術數據資料表
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 60A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Package Type | TO-263 | |
| Series | NVB | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 56mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 106nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 25 V | |
| Maximum Power Dissipation Pd | 178W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | AEC-Q101 | |
| Length | 10.2mm | |
| Height | 15.7mm | |
| Width | 4.7 mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 60A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Package Type TO-263 | ||
Series NVB | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 56mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 106nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 25 V | ||
Maximum Power Dissipation Pd 178W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals AEC-Q101 | ||
Length 10.2mm | ||
Height 15.7mm | ||
Width 4.7 mm | ||
Automotive Standard No | ||
Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 40 mohm, 1200 V, M1, D2PAK−7L Silicon Carbide MOSFET, N-Channel, 1200 V, 40 mΩ, D2PAK-7L
The ON Semiconductor Silicon Carbide Power MOSFET runs with 60 Ampere and 1200 Volts. It can be used in Automotive on board charger, DC or DC Converter applications.
AEC Q101 qualified
Production part approval process Capable
100% avalanche tested
Low effective output capacitance
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