Vishay Single E 1 Type N-Channel Power MOSFET, 26 A, 500 V, 3-Pin TO-220AB

RS庫存編號:: 180-7350
製造零件編號:: SIHP25N50E-GE3
製造商:: Vishay

Vishay Single E 1 Type N-Channel Power MOSFET, 26 A, 500 V, 3-Pin TO-220AB

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可享批量折扣

小計（1 管，共 50 件）*

TWD3,305.00

(不含稅)

TWD3,470.00

訂單超過 $1,300.00 免費送貨

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單位	每單位	每管*
50 - 50	TWD66.10	TWD3,305.00
100 - 150	TWD64.60	TWD3,230.00
200 +	TWD63.20	TWD3,160.00

* 參考價格

RS庫存編號:: 180-7350
製造零件編號:: SIHP25N50E-GE3
製造商:: Vishay

規格

產品概覽和技術數據資料表

法例與合規

產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Vishay
	Product Type	Power MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	26A
	Maximum Drain Source Voltage Vds	500V
	Package Type	TO-220AB
	Series	E
	Pin Count	3
	Maximum Drain Source Resistance Rds	0.145Ω
	Typical Gate Charge Qg @ Vgs	86nC
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	1.2V
	Maximum Gate Source Voltage Vgs	±30 V
	Maximum Power Dissipation Pd	250W
	Maximum Operating Temperature	150°C
	Transistor Configuration	Single
	Length	14.4mm
	Standards/Approvals	RoHS
	Height	6.71mm
	Width	10.52 mm
	Number of Elements per Chip	1
	Automotive Standard	No

	選取全部
	品牌 Vishay
	Product Type Power MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 26A
	Maximum Drain Source Voltage Vds 500V
	Package Type TO-220AB
	Series E
	Pin Count 3
	Maximum Drain Source Resistance Rds 0.145Ω
	Typical Gate Charge Qg @ Vgs 86nC
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 1.2V
	Maximum Gate Source Voltage Vgs ±30 V
	Maximum Power Dissipation Pd 250W
	Maximum Operating Temperature 150°C
	Transistor Configuration Single
	Length 14.4mm
	Standards/Approvals RoHS
	Height 6.71mm
	Width 10.52 mm
	Number of Elements per Chip 1
	Automotive Standard No

Datasheet

COO (Country of Origin):: CN

Vishay MOSFET

The Vishay through-hole mount N-channel TO-220AB-3 MOSFET is a new age product with a drain-source voltage of 500V and a maximum gate-source voltage of 30V. It has a drain-source resistance of 145mohms at a gate-source voltage of 10V. It has a maximum power dissipation of 250W and continuous drain current of 26A. It has a driving voltage of 10V. This product has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

Features and Benefits

• Low figure-of-merit (FOM): Ron x Qg

• Low gate charge (Qg)

• Low input capacitance (Ciss)

• Operating temperature ranges between -55°C and 150°C

• Reduced switching and conduction losses

Applications

• Hard switched topologies

• PC silver box/ATX power supplies

• Power factor correction power supplies (PFC)

• Switch mode power supplies (SMPS)

• Two-stage LED lighting

Certifications

• ANSI/ESD S20.20:2014

• BS EN 61340-5-1:2007

• UIS tested