Vishay Single Type N-Channel Power MOSFET, 5.2 A, 200 V TO-220AB
- RS庫存編號:
- 180-8799
- 製造零件編號:
- IRL620PBF
- 製造商:
- Vishay
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
查看批量定價選項小計（1 包，共 5 件）*
TWD289.00
(不含稅)
TWD303.45
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 705 件準備從其他地點送貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每包* |
|---|---|---|
| 5 - 10 | TWD57.80 | TWD289.00 |
| 15 - 20 | TWD56.00 | TWD280.00 |
| 25 + | TWD55.20 | TWD276.00 |
* 參考價格
- RS庫存編號:
- 180-8799
- 製造零件編號:
- IRL620PBF
- 製造商:
- Vishay
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Product Type | Power MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 5.2A | |
| Maximum Drain Source Voltage Vds | 200V | |
| Package Type | TO-220AB | |
| Maximum Drain Source Resistance Rds | 0.8Ω | |
| Typical Gate Charge Qg @ Vgs | 16nC | |
| Maximum Gate Source Voltage Vgs | ±10 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 50W | |
| Maximum Operating Temperature | 150°C | |
| Transistor Configuration | Single | |
| Standards/Approvals | RoHS 2002/95/EC | |
| Height | 6.48mm | |
| Length | 14.4mm | |
| Width | 10.52 mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Product Type Power MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 5.2A | ||
Maximum Drain Source Voltage Vds 200V | ||
Package Type TO-220AB | ||
Maximum Drain Source Resistance Rds 0.8Ω | ||
Typical Gate Charge Qg @ Vgs 16nC | ||
Maximum Gate Source Voltage Vgs ±10 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 50W | ||
Maximum Operating Temperature 150°C | ||
Transistor Configuration Single | ||
Standards/Approvals RoHS 2002/95/EC | ||
Height 6.48mm | ||
Length 14.4mm | ||
Width 10.52 mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The Vishay IRL620 is a N-channel power MOSFET having drain to source(Vds) voltage of 200V.The gate to source voltage(VGS) is 10V. It is having TO-220AB package. It offers drain to source resistance (RDS.) 0.8ohms at 5VGS.
Dynamic dV/dt rating
Repetitive avalanche rated
Logic level gate drive
相關連結
- Vishay Single Type N-Channel Power MOSFET 200 V TO-220AB IRL620PBF
- Vishay IRF620 Type N-Channel Power MOSFET 200 V Enhancement, 3-Pin TO-220AB
- Vishay IRF620 Type N-Channel Power MOSFET 200 V Enhancement, 3-Pin TO-220AB IRF620PBF
- Vishay Single 1 Type N-Channel Power MOSFET 200 V TO-263
- Vishay Single 1 Type N-Channel Power MOSFET 200 V TO-263 IRF620SPBF
- Vishay Single 1 Type N-Channel Power MOSFET 60 V TO-220AB
- Vishay Single 1 Type N-Channel Power MOSFET 500 V TO-220AB
- Vishay Single 1 Type N-Channel Power MOSFET 500 V TO-220AB IRFB17N50LPBF