Vishay Single 1 Type N-Channel Power MOSFET, 16 A, 500 V TO-220AB
- RS庫存編號:
- 180-8312
- 製造零件編號:
- IRFB17N50LPBF
- 製造商:
- Vishay
可享批量折扣
小計（1 管，共 50 件）*
TWD5,635.00
(不含稅)
TWD5,917.00
(含稅)
添加 50 件 件可免費送貨
最後的 RS 庫存
- 最終 500 個，準備發貨
單位 | 每單位 | 每管* |
|---|---|---|
| 50 - 50 | TWD112.70 | TWD5,635.00 |
| 100 - 150 | TWD110.20 | TWD5,510.00 |
| 200 + | TWD107.80 | TWD5,390.00 |
* 參考價格
- RS庫存編號:
- 180-8312
- 製造零件編號:
- IRFB17N50LPBF
- 製造商:
- Vishay
規格
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Channel Type | Type N | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 16A | |
| Maximum Drain Source Voltage Vds | 500V | |
| Package Type | TO-220AB | |
| Mount Type | Screw | |
| Maximum Drain Source Resistance Rds | 0.32Ω | |
| Maximum Gate Source Voltage Vgs | ±30 V | |
| Maximum Power Dissipation Pd | 220W | |
| Typical Gate Charge Qg @ Vgs | 130nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Transistor Configuration | Single | |
| Standards/Approvals | RoHS 2002/95/EC | |
| Number of Elements per Chip | 1 | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Channel Type Type N | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 16A | ||
Maximum Drain Source Voltage Vds 500V | ||
Package Type TO-220AB | ||
Mount Type Screw | ||
Maximum Drain Source Resistance Rds 0.32Ω | ||
Maximum Gate Source Voltage Vgs ±30 V | ||
Maximum Power Dissipation Pd 220W | ||
Typical Gate Charge Qg @ Vgs 130nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Transistor Configuration Single | ||
Standards/Approvals RoHS 2002/95/EC | ||
Number of Elements per Chip 1 | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The Vishay IRFB17N50L is a N-channel power MOSFET having drain to source(Vds) voltage of 500V.The gate to source voltage(VGS) is 30V. It is having TO-220AB package. It offers drain to source resistance (RDS.) 0.28ohms at 10VGS. Maximum drain current 16A.
Low gate charge Qg results in simple drive Requirement
Improved gate, avalanche, and dynamic dV/dt ruggedness
Fully characterized capacitance and avalanche voltage and current
Low trr and soft diode recovery
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