Vishay Single 1 Type N-Channel Power MOSFET, 16 A, 500 V TO-220AB IRFB17N50LPBF
- RS庫存編號:
- 180-8623
- 製造零件編號:
- IRFB17N50LPBF
- 製造商:
- Vishay
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 包，共 2 件）*
TWD297.00
(不含稅)
TWD311.84
(含稅)
訂單超過 $1,300.00 免費送貨
最後的 RS 庫存
- 14 件準備從其他地點送貨
- 最終 524 件從 2026年1月26日 起發貨
單位 | 每單位 | 每包* |
|---|---|---|
| 2 - 12 | TWD148.50 | TWD297.00 |
| 14 - 24 | TWD144.50 | TWD289.00 |
| 26 + | TWD142.50 | TWD285.00 |
* 參考價格
- RS庫存編號:
- 180-8623
- 製造零件編號:
- IRFB17N50LPBF
- 製造商:
- Vishay
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Product Type | Power MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 16A | |
| Maximum Drain Source Voltage Vds | 500V | |
| Package Type | TO-220AB | |
| Mount Type | Screw | |
| Maximum Drain Source Resistance Rds | 0.32Ω | |
| Maximum Power Dissipation Pd | 220W | |
| Maximum Gate Source Voltage Vgs | ±30 V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 130nC | |
| Transistor Configuration | Single | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS 2002/95/EC | |
| Number of Elements per Chip | 1 | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Product Type Power MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 16A | ||
Maximum Drain Source Voltage Vds 500V | ||
Package Type TO-220AB | ||
Mount Type Screw | ||
Maximum Drain Source Resistance Rds 0.32Ω | ||
Maximum Power Dissipation Pd 220W | ||
Maximum Gate Source Voltage Vgs ±30 V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 130nC | ||
Transistor Configuration Single | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS 2002/95/EC | ||
Number of Elements per Chip 1 | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The Vishay IRFB17N50L is a N-channel power MOSFET having drain to source(Vds) voltage of 500V.The gate to source voltage(VGS) is 30V. It is having TO-220AB package. It offers drain to source resistance (RDS.) 0.28ohms at 10VGS. Maximum drain current 16A.
Low gate charge Qg results in simple drive Requirement
Improved gate, avalanche, and dynamic dV/dt ruggedness
Fully characterized capacitance and avalanche voltage and current
Low trr and soft diode recovery
相關連結
- Vishay Single 1 Type N-Channel Power MOSFET 500 V TO-220AB
- Vishay Single E 1 Type N-Channel Power MOSFET 500 V, 3-Pin TO-220AB
- Vishay Single E 1 Type N-Channel Power MOSFET 500 V, 3-Pin TO-220AB SIHP25N50E-GE3
- Vishay Single Type N-Channel Power MOSFET 200 V TO-220AB
- Infineon Single HEXFET 1 Type N-Channel MOSFET Enhancement, 3-Pin TO-220AB AUIRL3705Z
- Vishay Single Type N-Channel Power MOSFET 200 V TO-220AB IRL620PBF
- Vishay Type N-Channel MOSFET 500 V Enhancement, 3-Pin TO-220AB IRF840HPBF
- Vishay Single 1 Type N-Channel Power MOSFET 60 V TO-220AB